2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features • High Output Power: 27.0␣ dBm Typical P 1 dB at 4␣ GHz • High Gain at 1 dB Compression: 12.0␣ dB Typical G 1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz Description The ATF-46101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 1.25␣ millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 100 mil Flange Package This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance. Electrical Specifications, TA = 25°C Parameters and Test Conditions[1] Symbol P1 dB Units Min. Typ. Max. 27.0 26.5 10.0 5.0 f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz f = 8.0 GHz dBm 25.0 G1 dB Power Output @ 1 dB Gain Compression: VDS = 9 V, IDS = 125 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 125 mA dB 9.0 ηadd Efficiency @ P1dB: VDS = 9 V, IDS = 125 mA f = 4.0 GHz % 38 gm Transconductance: VDS = 2.5 V, IDS = 125 mA mmho 100 IDSS Saturated Drain Current: VDS = 2.5 V, VGS = 0 V VP Pinch-off Voltage: VDS = 2.5 V, IDS = 5 mA Note: 1. RF Performance is determined by packaging and testing 10 samples per wafer. 5965-8731E 5-98 mA 200 330 450 V -5.4 -3.5 -2.0 ATF-46101 Absolute Maximum Ratings Symbol VDS VGS VGD Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Units V V V Absolute Maximum[1] +14 -7 -16 IDS PT TCH TSTG Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature mA W °C °C IDSS 2.0 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMOUNTING SURFACE = 25°C. 3. Derate at 13 mW/°C for TCASE > 25°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. θjc = 75°C/W; TCH = 150°C 1␣ µm Spot Size[4] Thermal Resistance: Liquid Crystal Measurement: ATF-46101 Typical Performance, TA = 25°C 25 MSG 25 P1 dB 20 15 30 10 20 5 25 10 5 24 2.0 4.0 6.0 0 8.0 10.0 12.0 FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression and 1 dB Compressed Gain vs. Frequency. VDS = 9V, IDS = 125 mA. 0 0 0 5 10 15 20 25 PIN (dBm) Figure 2. Output Power and Power Added Efficiency vs. Input Power. VDS = 9 V, IDS = 125 mA, f = 4.0 GHz. 5-99 GAIN (dB) 40 20 ηadd (%) G1 dB POUT (dBm) 10 26 G1 dB (dBm) 15 27 P1 dB (dBm) 30 20 28 MAG 15 MAG 10 |S21|2 5 0 1.0 2.0 4.0 6.0 10.0 14.0 FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 9 V, IDS = 125 mA. Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 9 V, IDS␣ =␣ 125 mA Freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Mag. .94 .86 .82 .82 .80 .79 .78 .78 .77 .76 .67 .60 .54 .50 S11 Ang. -56 -101 -131 -152 -173 165 143 131 123 118 104 86 71 64 dB 12.8 10.7 8.4 6.7 5.4 4.3 3.1 1.6 0.3 -1.2 -2.0 -2.7 -3.5 -4.0 S21 Mag. 4.37 3.41 2.64 2.16 1.86 1.64 1.43 1.20 1.03 .87 .79 .73 .67 .63 Ang. 135 98 71 48 26 5 -18 -36 -55 -72 -91 -110 -133 -154 A model for this device is available in the DEVICE MODELS section. 100 mil Flange Package Dimensions .05 R, TYP 1.3 SOURCE 4 .42 .265 10.7 6.73 GATE DRAIN 1 3 .062 DIA. 1.57 (2) PLCS .12 3.0 SOURCE 2 .03 0.8 0.025 ± 0.003 mils 0.64 ± 0.08 mm .044 1.12 .06 1.6 .100 2.54 .300 min .004 ± .002 .10 ± .05 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 Package marking code is 461 5-100 dB -31.4 -27.3 -26.9 -26.4 -26.0 -25.8 -25.4 -24.7 -23.9 -23.1 -22.6 -21.2 -19.7 -15.9 S12 Mag. .027 .043 .045 .048 .050 .051 .054 .058 .064 .070 .074 .087 .104 .160 S22 Ang. 52 30 18 9 -1 -12 -24 -37 -40 -52 -57 -66 -79 -99 Mag. .64 .59 .58 .62 .63 .65 .65 .70 .73 .76 .79 .83 .87 .92 Ang. -28 -56 -79 -98 -112 -126 -145 -166 173 158 146 136 124 115