Product Data Sheet March 31, 2003 2.4 mm Discrete HFET TGF4240-SCC Key Features and Performance • • • • • • • 2400 µm x 0.5 µm HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 56 % at 8.5 GHz Frequency Range: DC - 12 GHz Suitable for high reliability applications 0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in) Primary Applications • • • Cellular Base Stations High-reliability space Military DESCRIPTION The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE. Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4240-SCC is readily assembled using automatic equipment. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet March 31, 2003 TGF4240-SCC TABLE I MAXIMUM RATINGS SYMBOL VDS VGS PD TCH TSTG TM VALUE PARAMETER 1/ Drain to Source Voltage Gate to Source Voltage Range Power Dissipation Operating Channel Temperature Storage Temperature 12 V 0 to -5.0 Volts TBD 150°C -65 to 200°C Mounting Temperature (30 seconds) NOTES 2/ 3/, 4/ 320°C 1/ These ratings represent the maximum values for this device. Stresses beyond those listed under “Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “DC Probe Characteristics” is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability. 2/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from TBD to TBD hours. 3/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels 4/ These ratings apply to each individual FET TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet March 31, 2003 TGF4240-SCC TABLE II DC PROBE CHARACTERISTICS (TA = 25 °C, Nominal) Symbol Parameter Minimum Typical Maximum Unit Note IDSS Saturated Drain Current -- 588 -- mA 1/ GM Transconductance -- 396 -- mS 1/ VP Pinch-off Voltage 1 1.85 3 V 2/ VBGS Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain 17 22 30 V 2/ 17 22 30 V 2/ VBGD 1/ Total for two FETS 2/ VP, VBGS, and VBGD are negative. TABLE III ELECTRICAL CHARACTERISTICS (TA = 25 °C, Nominal) Bias Conditions: Vd = 8 V, Id = 100 mA Symbol Parameter Typical Unit Pout Output Power 31.5 dBm Gp Power Gain 10 dB PAE Power Added Efficiency 56 % TABLE IV THERMAL INFORMATION* Parameter RqJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 8 V ID = 100 mA Pdiss = TBD TCH o ( C) RqJC (°C/W) TM (HRS) TBD TBD TBD Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * The thermal information is a result of a detailed thermal model. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet March 31, 2003 TGF4240-SCC TYPICAL PERFORMANCE Bias Conditions: Freq = 8.5 GHzm Vd = 8V, Id = 100mA Pout (dBm) Gain (dB) PAE (%) Power Added Efficiency - % Gain - dB and Output Power - dBm (TA = 25 °C, Nominal) Input Power - dBm TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet March 31, 2003 TGF4240-SCC Unmatched Modeled S-Parameter Data for the TGF4240-SCC S11 S21 S12 S22 FREQ MAG ANG (°) MAG ANG (°) MAG ANG (°) MAG ANG (°) (GHz) dB deg dB deg dB deg dB deg 0.5 -0.336 -62.251 20.588 144.748 -31.032 56.129 -13.423 -116.099 1.0 -0.642 -100.759 17.874 122.599 -27.740 36.651 -10.066 -135.107 1.5 -0.803 -122.281 15.374 109.317 -26.741 25.761 -8.938 -144.013 2.0 -0.881 -135.190 13.286 100.360 -26.363 19.133 -8.381 -148.390 2.5 -0.920 -143.616 11.538 93.616 -26.216 14.702 -8.008 -150.580 3.0 -0.940 -149.505 10.046 88.120 -26.175 11.520 -7.705 -151.636 3.5 -0.948 -153.846 8.747 83.392 -26.194 9.118 -7.428 -152.083 4.0 -0.950 -157.179 7.598 79.175 -26.255 7.243 -7.161 -152.203 4.5 -0.948 -159.826 6.565 75.316 -26.343 5.750 -6.898 -152.157 5.0 -0.942 -161.984 5.626 71.723 -26.452 4.553 -6.638 -152.041 5.5 -0.934 -163.785 4.764 68.337 -26.580 3.595 -6.381 -151.912 6.0 -0.925 -165.317 3.966 65.118 -26.726 2.843 -6.128 -151.804 6.5 -0.914 -166.642 3.221 62.039 -26.886 2.275 -5.879 -151.737 7.0 -0.902 -167.805 2.522 59.080 -27.058 1.876 -5.636 -151.720 7.5 -0.890 -168.839 1.862 56.227 -27.242 1.639 -5.400 -151.757 8.0 -0.877 -169.769 1.236 53.470 -27.436 1.559 -5.172 -151.850 8.5 -0.863 -170.615 0.640 50.801 -27.639 1.634 -4.951 -151.995 9.0 -0.849 -171.390 0.071 48.214 -27.851 1.866 -4.739 -152.191 9.5 -0.835 -172.108 -0.475 45.704 -28.068 2.256 -4.535 -152.432 10 -0.821 -172.776 -1.000 43.267 -28.291 2.807 -4.340 -152.714 10.5 -0.807 -173.404 -1.506 40.901 -28.515 3.521 -4.154 -153.033 11.0 -0.793 -173.996 -1.995 38.603 -28.740 4.403 -3.976 -153.385 11.5 -0.779 -174.558 -2.468 36.371 -28.964 5.454 -3.807 -153.764 12.0 -0.765 -175.093 -2.928 34.202 -29.186 6.679 -3.645 -154.169 12.5 -0.751 -175.607 -3.374 32.095 -29.401 8.076 -3.491 -154.594 13.0 -0.737 -176.100 -3.808 30.048 -29.606 9.646 -3.345 -155.037 13.5 -0.724 -176.576 -4.232 28.060 -29.800 11.386 -3.206 -155.494 14.0 -0.711 -177.036 -4.645 26.131 -29.979 13.288 -3.074 -155.964 TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet March 31, 2003 TGF4240-SCC Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet March 31, 2003 TGF4240-SCC Assembly Process Notes Reflow process assembly notes: · · · · · Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: · · · · · · · Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: · · · · · Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Die are shipped in gel pack unless otherwise specified. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7