AAT7357 20V P-Channel Power MOSFET General Description Features The AAT7357 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSSOP-8 footprint has been squeezed into the footprint of a TSOPJW-8 package. • • • Drain-Source Voltage (max): -20V Contiunous Drain Current1 (max) = -5A @ 25°C Low On-Resistance: — 39mΩ @ VGS = -4.5V — 63mΩ @ VGS = -2.5V Dual TSOPJW-8 Package Applications • • • D1 D1 D2 D2 8 7 6 5 1 S1 2 G1 3 S2 4 G2 Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Absolute Maximum Ratings Top View TA = 25°C, unless otherwise noted. Symbol VDS VGS Description ID Continuous Drain Current @ TJ = 150°C1 IDM IS Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 PD Maximum Power Dissipation1 TJ TSTG Value Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C TA = 25°C TA = 70°C Units -20 ±12 ±5 ±4 ±12 -1.3 1.6 1.0 -55 to 150 -55 to 150 °C °C V A W Thermal Characteristics1 Symbol RθJA RθJA2 RθJF Description Typ Max Units Junction-to-Ambient Steady State, One FET On Junction-to-Ambient t<5 Seconds Junction-to-Foot 115 64 60 140 78 72 °C/W °C/W °C/W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs. 7357.2005.04.1.0 1 AAT7357 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25°C, unless otherwise noted. Symbol Description Conditions Min Typ Max Units DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA -20 V = -4.5V, I = -5A GS D RDS(ON) Drain-Source On-Resistance1 VGS = -2.5V, ID = -4A ID(ON) On-State Drain Current1 VGS = -4.5V, VDS = -5V (pulsed) -12 VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250µA -0.6 IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V VGS = 0V, VDS = -20V IDSS Drain-Source Leakage Current VGS = 0V, VDS = -16V, TJ = 70°C2 1 gfs Forward Transconductance VDS = -5V, ID = -5A Dynamic Characteristics2 QG Total Gate Charge VDS = -10V, RD = 2.0Ω, VGS = -4.5V QGS Gate-Source Charge VDS = -10V, RD = 2.0Ω, VGS = -4.5V QGD Gate-Drain Charge VDS = -10V, RD = 2.0Ω, VGS = -4.5V tD(ON) Turn-On Delay VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω tR Turn-On Rise Time VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω tD(OFF) Turn-Off Delay VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω tF Turn-Off Fall Time VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage1 VGS = 0, IS = -5A 3 IS Continuous Diode Current V 30 49 39 63 ±100 -1 -5 12 mΩ A V nA µA S 14 3.5 5.6 12 20 33 40 nC ns -1.2 -1.3 V A 1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2 7357.2005.04.1.0 AAT7357 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Output Characteristics Transfer Characteristics 12 12 4V through 10V 3.5V 8 ID (A) IDS (A) 25°C 8 2V 3V 4 VD = VG 10 6 4 2.5V 1.5V 125°C 2 -55°C 0 0 0 0.5 1 1.5 VDS (V) 0 2 On-Resistance vs. Gate to Source Voltage 0.08 0.08 0.06 0.06 RDS(ON) (mΩ) VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 0.04 0.02 0 0 0 5 10 15 0 20 1 2 3 4 0.5 VGS = 4.5V ID = 4.5A VGS(th) Variance (V) 1.6 6 7 8 9 10 Threshold Voltage On-Resistance vs. Junction Temperature 1.8 5 VGS (V) ID (A) Normalized RDS(ON) 4 3 VGS (V) On-Resistance vs. Drain Current RDS(ON) (Ω) 2 1 1.4 1.2 1.0 0.8 ID = 250µA 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 0.6 -50 -25 0 25 50 TJ (°C) 7357.2005.04.1.0 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (°C) 3 AAT7357 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Source-Drain Diode Forward Voltage Single Pulse Power, Junction to Ambient 40 100 35 30 TJ = 25°C TJ = 150°C 1 Power (W) IS (A) 10 25 20 15 10 5 0.1 0 0 0 .2 0.4 0 .6 0.8 1 1.00E-03 1.00E-02 1.00E-01 1.00E+01 1.00E+01 1.00E+02 1.00E+03 1.2 VSD (V) Time (s) Normalized Effective Transient Thermal Impedance Transient Thermal Response, Junction to Ambient 10 1 .5 0.1 0.01 .2 .1 .02 .01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s) 4 7357.2005.04.1.0 AAT7357 20V P-Channel Power MOSFET Ordering Information Package Marking1 Part Number (Tape and Reel)2 TSOPJW-8 NBXYY AAT7357ITS-T1 Package Information TSOPJW-8 2.85 ± 0.20 2.40 ± 0.10 0.325 ± 0.075 0.65 BSC 0.65 BSC 0.65 BSC 7° 0.055 ± 0.045 0.04 REF 0.15 ± 0.05 1.0175 ± 0.0925 0.9625 ± 0.0375 3.025 ± 0.075 0.010 0.45 ± 0.15 2.75 ± 0.25 All dimensions in millimeters. 1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD. 7357.2005.04.1.0 5 AAT7357 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 7357.2005.04.1.0