ANALOGICTECH AAT8343

AAT8343
20V P-Channel Power MOSFET
General Description
Features
The AAT8343 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech's ultra-high-density
proprietary TrenchDMOS™ technology, this product
demonstrates high power handling and small size.
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•
Applications
•
•
•
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Drain-Source Voltage (max): -20V
Continuous Drain Current1 (max):
-4.5A @ 25°C
Low On-Resistance:
— 60mΩ @ VGS = -4.5V
— 110mΩ @ VGS = -2.5V
TSOP-6 Package
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Top View
D
D
S
6
5
4
Absolute Maximum Ratings
1
2
3
TA = 25°C, unless otherwise noted.
D
D
G
Symbol
VDS
VGS
ID
IDM
IS
TJ
TSTG
Description
Value
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ = 150°C1
Units
-20
±12
±4.5
±3.6
±16
-1.3
-55 to 150
-55 to 150
°C
°C
Typ
Max
Units
95
51
25
115
62
30
2.0
1.3
°C/W
°C/W
°C/W
TA = 25°C
TA = 70°C
Pulsed Drain Current2
Continuous Source Current (Source-Drain Diode)1
Operating Junction Temperature Range
Storage Temperature Range
V
A
Thermal Characteristics1
Symbol
RθJA
RθJA2
RθJF
PD
Description
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Maximum Power Dissipation
TA = 25°C
TA = 70°C
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8343.2006.11.1.1
1
AAT8343
20V P-Channel Power MOSFET
Electrical Characteristics
TJ = 25°C, unless otherwise noted.
Symbol Description
Conditions
Min
DC Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0V, ID = -250µA
-20
VGS = -4.5V, ID = -4.5A
VGS = -2.5V, ID = -3.3A
1
ID(ON)
On-State Drain Current
VGS = -4.5V, VDS = -5V (pulsed)
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = -250µA
IGSS
Gate-Body Leakage Current
VGS = ±12V, VDS = 0V
VGS = 0V, VDS = -20V
IDSS
Drain Source Leakage Current
VGS = 0V, VDS = -16V, TJ = 70°C2
1
gfs
Forward Transconductance
VDS = -5V, ID = -4.5A
Dynamic Characteristics2
QG
Total Gate Charge
VDS = -10V, RD = 2.2Ω, VGS = -4.5V
QGS
Gate-Source Charge
VDS = -10V, RD = 2.2Ω, VGS = -4.5V
QGD
Gate-Drain Charge
VDS = -10V, RD = 2.2Ω, VGS = -4.5V
tD(ON)
Turn-On Delay
VDS = -10V, RD = 2.2Ω, VGS = -4.5V, RG = 6Ω
tR
Turn-On Rise Time
VDS = -10V, RD = 2.2Ω, VGS = -4.5V, RG = 6Ω
tD(OFF)
Turn-Off Delay
VDS = -10V, RD = 2.2Ω, VGS = -4.5V, RG = 6Ω
tF
Turn-Off Fall Time
VDS = -10V, RD = 2.2Ω, VGS = -4.5V, RG = 6Ω
Source-Drain Diode Characteristics
VSD
Source-Drain Forward
VGS = 0, IS = -4.5A
Voltage1
IS
Continuous Diode Current3
RDS(ON)
Typ
Units
V
49
85
Drain-Source On-Resistance1
Max
60
110
-16
-0.6
±100
-1
-5
7
mΩ
A
V
nA
µA
S
8.5
1.8
2.9
12
32
64
40
nC
ns
-1.3
V
-1.3
A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
8343.2006.11.1.1
AAT8343
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Transfer Characteristics
Output Characteristics
20
16
20
3.5V
5V
4.5V
4V
ID (A)
IDS (A)
-55°C
15
12
2.5V
8
1.5V
1
1.5
2
0
01
3
2.5
1
2
On-Resistance vs. Drain Current
4
5
On-Resistance vs. Gate-to-Source Voltage
0.4
0.25
0.32
0.2
RDS(ON) (Ω
Ω)
RDS(ON) (Ω
Ω)
3
VGS (V)
VDS (V)
0.24
VGS = 2.5V
0.16
0.08
ID = 4.5A
0.15
0.1
0.05
VGS = 4.5V
0
0
5
10
15
0
20
0
1
2
ID (A)
1.5
1.4
0.5
VGS = 4.5V
ID = 4.2A
1.2
1.1
1.0
0.9
0.8
0.7
0.3
0.2
0.1
0
-0.1
-0.2
-25
0
25
50
TJ (°°C)
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5
ID = 250μA
0.4
1.3
0.6
-50
4
Threshold Voltage
VGS(th) Variance (V)
1.6
3
VGS (V)
On-Resistance vs. Junction Temperature
Normalized RDS(ON)
125°C
5
0
0.5
25°C
10
2V
4
0
VD = VG
3V
75
100
125
150
-0.3
-50
-25
0
25
50
75
100
125
150
T J (ºC)
3
AAT8343
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Source-Drain Diode Forward Voltage
Gate Charge
100
5
VD = 10V
ID = 4.5A
4
IS (A)
VGS (V)
10
3
2
TJ = 25°C
TJ = 150°C
1
1
0.1
0
0
0
2
4
6
8
0.2
0.4
0.6
10
0.8
1
1.2
VSD (V)
QG, Charge (nC)
Single Pulse Power, Junction to Ambient
Capacitance
50
45
40
800
Ciss
35
Power (W)
Capacitance (pF)
1000
600
400
Coss
200
30
25
20
15
10
Crss
5
0
0
0
5
10
15
20
0.001
0.01
0.1
VDS (V)
1
10
100
1000
Time (s)
Normalized Effective
Transient Thermal Impedance
Transient Thermal Response, Junction to Ambient
10
1
0.1
.5
.2
.1
.05
.02
0.01
Single Pulse
0.001
0.0001
4
0.001
0.01
0.1
1
10
100
1000
8343.2006.11.1.1
AAT8343
20V P-Channel Power MOSFET
Ordering Information
Package
Marking1
Part Number (Tape and Reel)2
TSOP-6
KEXYY
AAT8343IDU-T1
All AnalogicTech products are offered in Pb-free packaging. The term “Pb-free” means
semiconductor products that are in compliance with current RoHS standards, including
the requirement that lead not exceed 0.1% by weight in homogeneous materials. For more
information, please visit our website at http://www.analogictech.com/pbfree.
Package Information
TSOP-6
1.90 BSC
2.80 ± 0.20
1.625 ± 0.125
0.95 BSC
0.40 ± 0.10
Top View
7° NOM
0.09 REF
2.95 ± 0.15
0.14 ± 0.06
0.45 ± 0.15
0.60 REF
Side View
GAUGE PLANE
4° ± 4°
1.00 ± 0.10
0.05 ± 0.05
0.85 ± 0.15
0.09 REF
0.25 BSC
End View
All dimensions in millimeters.
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
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AAT8343
20V P-Channel Power MOSFET
© Advanced Analogic Technologies, Inc.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights,
or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice.
Customers are advised to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech
warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed.
AnalogicTech and the AnalogicTech logo are trademarks of Advanced Analogic Technologies Incorporated. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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