AAT8343 20V P-Channel Power MOSFET General Description Features The AAT8343 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size. • • Applications • • • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -4.5A @ 25°C Low On-Resistance: — 60mΩ @ VGS = -4.5V — 110mΩ @ VGS = -2.5V TSOP-6 Package Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Top View D D S 6 5 4 Absolute Maximum Ratings 1 2 3 TA = 25°C, unless otherwise noted. D D G Symbol VDS VGS ID IDM IS TJ TSTG Description Value Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150°C1 Units -20 ±12 ±4.5 ±3.6 ±16 -1.3 -55 to 150 -55 to 150 °C °C Typ Max Units 95 51 25 115 62 30 2.0 1.3 °C/W °C/W °C/W TA = 25°C TA = 70°C Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range V A Thermal Characteristics1 Symbol RθJA RθJA2 RθJF PD Description Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25°C TA = 70°C W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs. 8343.2006.11.1.1 1 AAT8343 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25°C, unless otherwise noted. Symbol Description Conditions Min DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA -20 VGS = -4.5V, ID = -4.5A VGS = -2.5V, ID = -3.3A 1 ID(ON) On-State Drain Current VGS = -4.5V, VDS = -5V (pulsed) VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250µA IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V VGS = 0V, VDS = -20V IDSS Drain Source Leakage Current VGS = 0V, VDS = -16V, TJ = 70°C2 1 gfs Forward Transconductance VDS = -5V, ID = -4.5A Dynamic Characteristics2 QG Total Gate Charge VDS = -10V, RD = 2.2Ω, VGS = -4.5V QGS Gate-Source Charge VDS = -10V, RD = 2.2Ω, VGS = -4.5V QGD Gate-Drain Charge VDS = -10V, RD = 2.2Ω, VGS = -4.5V tD(ON) Turn-On Delay VDS = -10V, RD = 2.2Ω, VGS = -4.5V, RG = 6Ω tR Turn-On Rise Time VDS = -10V, RD = 2.2Ω, VGS = -4.5V, RG = 6Ω tD(OFF) Turn-Off Delay VDS = -10V, RD = 2.2Ω, VGS = -4.5V, RG = 6Ω tF Turn-Off Fall Time VDS = -10V, RD = 2.2Ω, VGS = -4.5V, RG = 6Ω Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -4.5A Voltage1 IS Continuous Diode Current3 RDS(ON) Typ Units V 49 85 Drain-Source On-Resistance1 Max 60 110 -16 -0.6 ±100 -1 -5 7 mΩ A V nA µA S 8.5 1.8 2.9 12 32 64 40 nC ns -1.3 V -1.3 A 1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2 8343.2006.11.1.1 AAT8343 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Transfer Characteristics Output Characteristics 20 16 20 3.5V 5V 4.5V 4V ID (A) IDS (A) -55°C 15 12 2.5V 8 1.5V 1 1.5 2 0 01 3 2.5 1 2 On-Resistance vs. Drain Current 4 5 On-Resistance vs. Gate-to-Source Voltage 0.4 0.25 0.32 0.2 RDS(ON) (Ω Ω) RDS(ON) (Ω Ω) 3 VGS (V) VDS (V) 0.24 VGS = 2.5V 0.16 0.08 ID = 4.5A 0.15 0.1 0.05 VGS = 4.5V 0 0 5 10 15 0 20 0 1 2 ID (A) 1.5 1.4 0.5 VGS = 4.5V ID = 4.2A 1.2 1.1 1.0 0.9 0.8 0.7 0.3 0.2 0.1 0 -0.1 -0.2 -25 0 25 50 TJ (°°C) 8343.2006.11.1.1 5 ID = 250μA 0.4 1.3 0.6 -50 4 Threshold Voltage VGS(th) Variance (V) 1.6 3 VGS (V) On-Resistance vs. Junction Temperature Normalized RDS(ON) 125°C 5 0 0.5 25°C 10 2V 4 0 VD = VG 3V 75 100 125 150 -0.3 -50 -25 0 25 50 75 100 125 150 T J (ºC) 3 AAT8343 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Source-Drain Diode Forward Voltage Gate Charge 100 5 VD = 10V ID = 4.5A 4 IS (A) VGS (V) 10 3 2 TJ = 25°C TJ = 150°C 1 1 0.1 0 0 0 2 4 6 8 0.2 0.4 0.6 10 0.8 1 1.2 VSD (V) QG, Charge (nC) Single Pulse Power, Junction to Ambient Capacitance 50 45 40 800 Ciss 35 Power (W) Capacitance (pF) 1000 600 400 Coss 200 30 25 20 15 10 Crss 5 0 0 0 5 10 15 20 0.001 0.01 0.1 VDS (V) 1 10 100 1000 Time (s) Normalized Effective Transient Thermal Impedance Transient Thermal Response, Junction to Ambient 10 1 0.1 .5 .2 .1 .05 .02 0.01 Single Pulse 0.001 0.0001 4 0.001 0.01 0.1 1 10 100 1000 8343.2006.11.1.1 AAT8343 20V P-Channel Power MOSFET Ordering Information Package Marking1 Part Number (Tape and Reel)2 TSOP-6 KEXYY AAT8343IDU-T1 All AnalogicTech products are offered in Pb-free packaging. The term “Pb-free” means semiconductor products that are in compliance with current RoHS standards, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. For more information, please visit our website at http://www.analogictech.com/pbfree. Package Information TSOP-6 1.90 BSC 2.80 ± 0.20 1.625 ± 0.125 0.95 BSC 0.40 ± 0.10 Top View 7° NOM 0.09 REF 2.95 ± 0.15 0.14 ± 0.06 0.45 ± 0.15 0.60 REF Side View GAUGE PLANE 4° ± 4° 1.00 ± 0.10 0.05 ± 0.05 0.85 ± 0.15 0.09 REF 0.25 BSC End View All dimensions in millimeters. 1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD. 8343.2006.11.1.1 5 AAT8343 20V P-Channel Power MOSFET © Advanced Analogic Technologies, Inc. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice. Customers are advised to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. AnalogicTech and the AnalogicTech logo are trademarks of Advanced Analogic Technologies Incorporated. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. 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