ASI MM8006

MM8006
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
PACKAGE STYLE TO-72
The ASI MM8006 is Designed for
High Frequency Low Noise Amplifier
and Oscillator Applications.
MAXIMUM RATINGS
IC
50 mA
VCBO
15 V
PDISS
600 mW @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
CHARACTERISTICS
2 = BASE
3 = COLLECTOR
4 = CASE
NONE
TC = 25 °C
SYMBOL
BVCEO
1 = EMITTER
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
V
IC = 3.0 mA
10
BVCBO
IC = 1.0 µA
15
ICBO
VCB = 15 V
VCB = 15 V
BVEBO
IE = 10 µA
hFE
VCE = 1.0 V
IC = 1.0 mA
VCE(SAT)
IC = 10 mA
IB = 1.0 mA
0.4
V
VBE(SAT)
IC = 10 mA
IB = 1.0 mA
1.0
V
ft
VCE = 10 V
IC = 4.0 mA
Cob
VCB = 0 V
VCB = 10 V
f = 140 KHz
f = 140 KHz
3.0
1.7
pF
Cib
VEB = 0.5 V
f = 140 KHz
2.0
pF
NF
VCE = 6.0 V
IC = 1.0 mA
f = 60 MHz
6.0
dB
Gpe
VCB = 12 V
IC = 6.0 mA
f = 200 MHz
15
dB
Pout
η
VCB = 15 V
IC = 8.0 mA
f = 500 MHz
30
25
mW
%
TA = 150 °C
f = 100 MHz
V
0.01
1.0
µA
3.0
V
25
---
MHz
1000
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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