2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 500 C/W O O O O O 1 = EMITTER 3 = COLLECTOR O CHARACTERISTICS SYMBOL 2 = BASE 4 = CASE NONE O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 2 mA 15 V BVCBO IC = 1.0 µA 30 V ICBO 10 VCB = 6.0 V O TA = 150 C BVEBO IE = 10 µA V 3.0 hFE VCE = 6.0 V Cob VCB = 6 V hFE VCE = 6 V IC = 5 mA hfe VCE = 6 V IC = 5 mA rb´CC VCB = 6 V POSC VCC = 20 V NF VCB = 6 V IC = 5.0 mA µA 1.0 20 f = 1.0 MHz 20 150 --- 0.75 pF 150 --- f = 400 MHz 3.75 4.25 6 --- IE = -5 mA f = 79.8 MHz 1 5 8 pF IC = 15 mA f = 1.0 GHz IC = 2 mA RG = 50 Ω f = 1.0 GHz 6 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mW 60 7 dB REV. A 1/1