NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG(A) The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold™ Metalization System F H K J G I N L M MAXIMUM RATINGS 43.2 A IC 65 V VCBO 65 V VCES 3.5 V VEBO PDISS O 1167 W @ TC = 25 C O O -65 C to +200 C TJ DIM MINIMUM inches / mm inches / mm A .210 / 5.33 .230 / 5.84 B .045 / 1.14 .055 / 1.40 C .125 / 3.18 .135 / 3.43 D .380 / 9.65 .390 / 9.91 E .770 / 19.56 .830 / 21.08 F .070 / 1.78 .080 / 2.03 G .215 / 5.46 .235 / 5.97 H .420 / 10.67 .430 / 10.92 I .645 / 16.38 .655 / 16.64 J .895 / 22.73 .905 / 22.99 K .002 / 0.05 .006 / 0.15 L .058 / 1.47 .065 / 1.65 M .115 / 2.92 .130 / 3.30 .395 / 10.03 .405 / 10.29 .230 / 5.84 N P TSTG -65 OC to +200 OC θ JC 0.15 OC/W CHARACTERISTICS SYMBOL MAXIMUM ORDER CODE: ASI10687 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 50 mA 65 V BVEBO IE = 10 mA 3.5 V ICES VCE = 30 V hFE VCE = 5.0 V IC = 5.0 A PG ηC VCE = 40 V PIN = 54 W 20 f = 425 MHz 9.7 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 15 mA 200 --- dB % REV. A 1/1