VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 FEATURES: B C 45° ØA • • • Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC 400 mA (MAX) VCBO 40 V VCEO 20 V VCER 40 V PDISS O O .029 / 0.740 .045 / 1.140 C .028 / 0.720 .034 / 0.860 D .335 / 8.510 .370 / 9.370 E .305 / 7.750 .335 / 8.500 .240 / 6.100 TJ -65 C to +200 C TSTG -65 OC to +200 OC H θ JC 20 OC/W SYMBOL .016 / 0.407 .020 / 0.508 ORDER CODE: ASI10711 O TC = 25 C NONETEST CONDITIONS IC = 5.0 mA BVCER IC = 5.0 mA BVEBO IE = 100 µA ICEO VCE = 12 V hFE VCE = 5.0 V IC = 100 mA VCE(SAT) IC = 100 mA IB = 20 mA COB VCB = 12.5 V ηC .260 / 6.600 .500 / 12.700 G BVCEO PG .200 / 5.080 B F CHARACTERISTICS inches / mm inches / mm A 3.5 W @ TC = 25 OC MAXIMUM MINIMUM DIM 2.0 V VEBO H G VCE = 12.5 V RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 20 V 40 V 2.0 V 10 f = 1.0 MHz POUT = 1.0 W f = 175 MHz UNITS 10 mA 200 --- 0.5 Vdc 4.0 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.2 % REV. A 1/1