2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for wideband large-signal amplifier stages in the 125 – 175 MHz range. .112x45° A C B E FEATURES: ØC • Minimum Gain = 7.6 dB • Output Power = 40 W • Omnigold™ Metalization System E B D H I J G #8-32 UNC-2A MAXIMUM RATINGS F E IC 5.0 A VCBO 65 V VCEO 35 V MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 60 W @ TC = 25 °C G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 TJ -65 °C to +200 °C I .155 / 3.94 TSTG -65 °C to +200 °C θJC 2.9 °C/W VEBO PDISS 4.0 V CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V GP VCE = 28 V POUT = 40 W f = 175 MHz ηC VCE = 10 V IC = 200 mA f = 100 MHz IC = 500 mA 5.0 f = 1.0 MHz 45 7.6 8.1 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA --- --- 65 pF --- dB % REV. A 1/1