CBSL30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI CBSL30 is Designed for A .040x45° B C 2XØ.130 4X .025 R FEATURES: .115 .430 D • • • Omnigold™ Metalization System E F .125 G H I J K MAXIMUM RATINGS 7.5 A IC 48V VCBO 25 V VCEO 3.5 V VEBO PDISS O 88 W @ TC = 25 C O O -65 C to +200 C TJ O -65 C to +150 C θ JC 3.0 OC/W CHARACTERISTICS BVCBO BVCER MAXIMUM DIM MINIMUM inches / mm inches / mm A .355 / 9.02 .365 / 9.27 B .115 / 2.92 .125 / 3.18 C .075 / 1.91 .085 / 2.16 D .225 / 5.72 .235 / 5.97 E .090 / 2.29 .110 / 2.79 F .720 / 18.29 .730 / 18.54 G .970 / 24.64 .980 / 24.89 H .355 / 9.02 .365 / 9.27 I .004 / 0.10 .006 / 0.15 J .120 / 3.05 .130 / 3.30 K .160 / 4.06 .180 / 4.57 L .230 / 5.84 .260 / 6.60 O TSTG SYMBOL L ORDER CODE: ASI10582 O TC = 25 C NONETEST CONDITIONS IC = 100 mA RBE = 150 Ω MINIMUM TYPICAL MAXIMUM UNITS 48 55 --- V 30 40 --- V 25 28 --- BVCEO IC = 40 mA IC = 40 mA BVEBO IE = 10 mA 3.5 5.0 --- V ICBO VCE = 24 V 10 --- --- mA hFE VCE = 20 V 15 40 100 --- COB VCB = 25 V 50 pF PG IMD3 VCE = 25 V POUT = 30 W --- dB dBc IC = 2.0 A f = 1.0 MHz ICQ = 150 mA f1 = 860.0 MHz f = 860 MHz f2 = 860.1 MHz 7.5 -35 VSWR1 VCE = 25 V VCE = 25 V ± 20% VSWR = 20:1 VSWR = 10:1 No Degradation in Output Device Typ. VSWR2 VCE = 25 V ± 20% PIN = PIN (norm) +3 dB VSWR = 5:1 No Degradation in Output Device Typ. No Degradation in Output Device Typ. OVD VCE = 25 V VCE = 25 V ± 20% PIN (norm) = +5 Db PIN (norm) = +3 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1