CD2315 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment. .112 x 45° B A 2 1 Ø.125 NOM. FULL R J .125 3 FEATURES: 2 C D • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System E F G MAXIMUM RATINGS H I DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 MAXIMUM IC 10 A VCB 60 V E F .004 / 0.10 .006 / 0.15 VCE 35 V G .085 / 2.16 .105 / 2.67 H .160 / 4.06 PDISS 140 W @ TC = 25 °C I TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.05 °C/W CHARACTERISTICS .730 / 18.54 .970 / 24.64 .980 / 24.89 .385 / 9.78 .180 / 4.57 .280 / 7.11 .240 / 6.10 1 = Collector .255 / 6.48 2 = Emitter 3 = Base TC = 25 °C BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V GPE VCE = 25 V IMD3 .720 / 18.29 D J NONETEST CONDITIONS SYMBOL C PREF = 16 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM 35 V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz UNITS 13.5 mA 100 --- 80 pF dB 14.5 Snd. = -7 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 -55 dBc REV. B 1/1