SD1285 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1285 is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° A E • PG = 15 dB min. at 20 W/30 MHz • IMD = -30 dBc max. at 20 W (PEP) • Omnigold™ Metalization System • Emitter Ballasting C Ø.125 NOM. FULL R J .125 B E C D E F G H I MAXIMUM RATINGS IC 4.5 A VCBO DIM MINIMUM inches / mm inches / mm 36 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 VCEO 18 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 VEBO 4.0 V E PDISS 80 W @ TC = 25 °C MAXIMUM .385 / 9.78 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.2 °C/W CHARACTERISTICS .255 / 6.48 TC = 25 °C NONETEST CONDITIONS SYMBOL .240 / 6.10 J MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCEO IC = 50 mA 18 V BVCES IC = 50 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V f = 1.0 MHz ICQ = 25 mA VCC = 12.5 V POUT = 20 Watts (PEP) f = 30 MHz GP IMD3 IC = 1.0 A 10 15 mA 200 --- 100 pF 18 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 -30 dBc REV. B 1/1