HF125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF125-28 is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System FULL R E L C Ø.125 NOM. C B B E H E D G F MAXIMUM RATINGS I J IC 20 A VCBO 65 V VCEO 36 V VEBO 270 W @ TC = 25 OC TJ -65 OC to +200 OC O O T STG -65 C to +150 C θ JC 0.65 OC/W SYMBOL MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM .125 / 3.18 C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 E PDISS CHARACTERISTICS DIM B 4.0 V K F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K L ORDER CODE: ASI10608 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 100 mA 35 V BV CES IC = 100 mA 65 V BV CBO IC = 100 mA 65 BV EBO IE = 10 mA 4.0 ICES VCE = 30 V hFE VCE = 5.0 V Cob VCB = 30 V GP VCE = 28 V PIN = 3.95 W f = 30 MHz IMD3 VCE = 28 V ICQ = 100 mA f = 30 MHz IC = 5.0 A V 10 f = 1.0 MHz --- 250 15 16 -34 15 mA 200 --- --- pF dB -30 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.