ASI LT1001A

LT1001A
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
B
C
45°
ØA
ØD
DESCRIPTION:
E
The ASILT1001A is a High
Frequency Transistor Designed for
High Gain Low Noise CATV, and
MATV Amplifier Applications.
F
H
G
MAXIMUM RATINGS
200 mA
IC
DIM
PDISS
inches / mm
inches / mm
.200 / 5.080
A
20 V
VCE
MAXIMUM
MINIMUM
O
2.5 W @ TC = 50 C
B
.029 / 0.740
.045 / 1.140
C
.028 / 0.720
.034 / 0.860
D
.335 / 8.510
.370 / 9.370
E
.305 / 7.750
.335 / 8.500
.240 / 6.100
TJ
-65 °C to +200 °C
F
TSTG
-65 °C to +200 °C
H
θJC
70 °C/W
.260 / 6.600
.500 / 12.700
G
.016 / 0.407
.020 / 0.508
1 = EMITTER
2 = BASE
3 = COLLECTOR(CASE)
NONE
CHARACTERISTICS
SYMBOL
TA = 25 °C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCEO
IC = 5.0 mA
20
V
BVCBO
IC = 1.0 mA
40
V
BVEBO
IE = 100 µA
3.5
V
ICBO
VCB = 10 V
hFE
VCE = 5.0 V
IC = 50 mA
VCE(SAT)
IC = 50 mA
IB = 5.0 mA
ft
VCE = 14 V
IC = 90 mA
Ccb
VCB = 10 V
NF
VCE = 8.0 V
IC = 50 mA
f = 300 MHz
2.5
dB
GUmax
VCE = 14 V
IC = 90 mA
f = 300 MHz
15
dB
70
f = 300 MHz
µA
300
---
500
mV
3.0
GHz
f = 1.0 MHz
1.6
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
50
pF
REV. A
1/1