2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2SC1252 is a High Frequency Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. PACKAGE STYLE TO-39 FEATURES INCLUDE: • High Gain -17 dB Typ. @ 200 MHz • Low NF - 3.0 dB Typ. @ 200 MHz • Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 45 V VCE 25 V PDISS 5 W @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C θJC 35 °C/W CHARACTERISTICS SYMBOL 1 = Emitter 2 = Base 3 & 4 = Collector (Case) TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 25 V BVCBO IC = 100 µA 45 V ICBO VCE = 30 V 100 nA IEBO VEB = 2.0 V 500 nA hFE VCE = 10 V IC = 50 mA 200 --- VCE = 15 V IC = 15 mA VCE = 15 V IC = 70 mA ft 20 f = 200 MHz 1200 MHz 1400 COB VCB = 15 V GPE VCE = 15 V IC = 50 mA f = 200 MHz NF VCE = 15 V IC = 30 mA f = 200 MHz f = 1.0 MHz 3.0 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. dB 17 3.0 pF 4.0 dB REV. B 1/1