ASI 2SC1252

2SC1252
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2SC1252 is a High Frequency
Transistor, Designed for Wide Band
Amplifier Applications up to 500 MHz.
PACKAGE STYLE TO-39
FEATURES INCLUDE:
• High Gain -17 dB Typ. @ 200 MHz
• Low NF - 3.0 dB Typ. @ 200 MHz
• Hermetic TO-39 Package
MAXIMUM RATINGS
IC
400 mA
VCB
45 V
VCE
25 V
PDISS
5 W @ TC = 25 °C
TJ
-65 to +200 °C
TSTG
-65 to +200 °C
θJC
35 °C/W
CHARACTERISTICS
SYMBOL
1 = Emitter
2 = Base
3 & 4 = Collector (Case)
TC = 25 °C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCEO
IC = 5.0 mA
25
V
BVCBO
IC = 100 µA
45
V
ICBO
VCE = 30 V
100
nA
IEBO
VEB = 2.0 V
500
nA
hFE
VCE = 10 V
IC = 50 mA
200
---
VCE = 15 V
IC = 15 mA
VCE = 15 V
IC = 70 mA
ft
20
f = 200 MHz
1200
MHz
1400
COB
VCB = 15 V
GPE
VCE = 15 V
IC = 50 mA
f = 200 MHz
NF
VCE = 15 V
IC = 30 mA
f = 200 MHz
f = 1.0 MHz
3.0
15
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
dB
17
3.0
pF
4.0
dB
REV. B
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