MS175H NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-72 The MS175H is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 100 mA (PEAK) VCE 15 V PDISS 300 mW @ TC = 25 C O 200 mW @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C O O O O O CHARACTERISTICS 1 = EMITTER 3 = COLLECTOR NONE O TC = 25 C SYMBOL 2 = BASE 4 = CASE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 15 V BVCBO IC = 10 µA 30 V ICBO VCB = 20 V BVEBO IE = 1.0 µA hFE VCE = 1.0 V IC = 5.0 mA VCE(SAT) IC = 20 mA VBE(SAT) 0.01 1.0 O TA = 150 C 2.0 µA V 40 150 --- IB = 2.0 mA 0.8 V IC = 20 mA IB = 2.0 mA 1.0 V ft VCE = 10 V IC = 5.0 mA Cob VCB = 0 V VCB = 10 V f = 1.0 MHz f = 1.0 MHz 3.0 1.0 pF Cib VEB = 0.5 V f = 1.0 MHz 3.0 pF NF Gpe VCE = 6.0 V IC = 1.5 mA f = 200 MHz 4.5 dB Po η VCB = 10 V IE = 12 mA f = 500 MHz f = 100 MHz 1500 MHz 3.5 15 30 25 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mW % REV. A 1/1