MRF161 SILICON N-CHANNEL RF POWER MOSFET PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF161 is an EnhancementMode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Applications from 2.0 to 400 MHz. .112x45° A S B S G D G H F I J ID 900 mA VDSS 65 V VGS ±40 V O 17.5 W @ TC = 25 C TJ -65 C to +200 C O MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 O O -65 C to +150 C MAXIMUM .125 / 3.18 C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 E O F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K O 10 C/W K DIM B PDISS CHARACTERISTICS Ø.125 NOM. C MAXIMUM RATINGS θJC D FULL R E TSTG L L NONE O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM 65 TYPICAL MAXIMUM UNITS V(BR)DSS ID = 5.0 mA VGS = 0 V IDSS VDSS = 28 V VGS = 0 V 1.0 mA IGSS VGS = 40 V VDS = 0 V 1.0 µA VGS(th) VDS = 10 V ID = 10 mA 1.0 6.0 V gfs VDS = 10 V ID = 100 mA 80 Ciss Coss Crss VDS = 28 V VGS = 0 V NF VDS = 28 V ID = 100 mA f = 400 MHz ZS = 67.7+j = 14.1 ZL = 14.5+j = 25.7 Gps η VDD = 28 V ψ IDQ = 50 mA IDQ = 50 mA Pout = 5.0 W VDD = 28 V VSWR = 30:1 AT ALL PHASE ANGLES mmhos 7.0 9.7 2.3 f = 1.0 MHz Pout = 5.0 W V 3.0 11.0 45 13.5 50 pF dB dB % NO DEGRADRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1