ASI MRF137

MRF137
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
PACKAGE STYLE
The ASI MRF137 is a N-Channel
Enhancement MOSFET, Designed for
Wideband Large Signal Output and
Driver Stage Applications up to
400 MHz.
MAXIMUM RATINGS
ID
5.0 A
VDSS
65 V
PDISS
100 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
1.75 °C/W
CHARACTERISTICS
1 = DRAIN
2 = GATE
3 & 4 = SOURCE
TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
V(BR)DSS
ID = 10 mA
VGS = 0 V
65
IDSS
VDS = 28 V
VGS = 0 V
4.0
mA
IGSS
VDS = 0 V
VGS = 20 V
1.0
µA
VGS(th)
ID = 25 mA
VDS = 10 V
1.0
3.0
6.0
V
gfs
ID = 500 mA
VDS = 10 V
500
750
Ciss
Coss
Crss
VDS = 28 V
VGS = 0 V
NF
VDS = 28 V
ID = 1.0 A
f = 150 MHz
Gps
η
VDD = 28 V
IDQ = 25 mA
Pout = 30 W
f = 150 MHz
ψ
VDD = 28 V
IDQ = 25 mA
V
mmhos
48
f = 1.0 MHz
45
pF
11
Pout = 30 W
f = 150 MHz
VSWR 30:1 @ ALL PHASE ANGLES
12
50
1.5
dB
16
60
dB
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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