2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz. .112x45° E FULL R FEATURES: C Ø.125 NOM. C B • ηC = 60 % min. @ 100 W/150 MHz • PG = 6.0 dB min. @ 100 W/150 MHz • Omnigold™ Metalization System E B E H D G F I J MAXIMUM RATINGS 9.0 A IC L A K MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 .125 / 3.18 B C .245 / 6.22 .255 / 6.48 .720 / 18.28 .7.30 / 18.54 VCBO 65 V D VEBO 4.0 V F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 PDISS 117 W @ TC = 25 °C H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 -65 °C to +200 °C TJ TSTG -65 °C to +150 °C θJC 1.5 °C/W ORDER CODE: ASI10790 TC = 25 °C NONETEST CONDITIONS SYMBOL .280 / 7.11 K L CHARACTERISTICS .125 / 3.18 E MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 Ma 4.0 V ICES VCE = 30 V 5.0 mA ICBO VCB = 30 V 30 mA hFE VCE = 5.0 V COB VCE = 28 V IC = 500 mA 5.0 f = 1.0 MHz PG ηC VCC = 28 V POUT = 100 W f = 150 MHz --130 pF 6.0 dB 60 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1