TP2314 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 (CE) DESCRIPTION: The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case. MAXIMUM RATINGS I 1.0 A V 18 V PDISS 8.0 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC θ JC 1 = COLLECTOR 2 = BASE 3 = EMITTER O 22 C/W CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 10 mA 18 V BV CES IC = 5.0 mA 36 V BV CBO IC = 5.0 mA 36 V ICBO VCB = 15 V BV EBO IE = 1.0 mA hFE VCE = 5.0 V Cob VCB = 15 V GPE η VCC = 12.5 V 250 IC = 250 mA 4.0 V 5.0 --- f = 1.0 MHz Pout = 40 W f = 175 MHz µA 50 20 pF 0.1 W % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.