TPV591 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3 W @ TC = 25 OC TJ -55 OC to +200 OC T STG -55 OC to +200 OC θ JC 33.0 OC/W CHARACTERISTICS 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER NONE TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 10 mA 22 V BV CBO IC = 10 mA 45 V BV EBO IE = 1.0 mA 3.5 V hFE VCE = 5.0 V Cob VCB = 28 V f = 1.0 MHz Pref = 0.5 W f = 860 MHz Pg IMD IC = 100 mA SOUND CARRIER = -7.0 dB VISION CARRIER = -8.0 dB 20 200 --- 3.0 pF 13 dB CHROMA = -16 dB Pref = 0.5 W f = 860 MHz VCE = 20 V IC = 150 mA SOUND CARRIER =-7.0dB VISION CARRIER = -8.0 dB CHROMA = -16 dB -58 dB A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. ERROR! REFERENCE SOURCE NOT FOUND. Α ∆ ς Α Ν Χ Ε ∆ Σ Ε Μ Ι Χ Ο Ν ∆ Υ Χ Τ Ο Ρ, Ι Ν Χ. 7525 ΕΤΗΕΛ ΑςΕΝΥΕ • ΝΟΡΤΗ ΗΟΛΛΨΩΟΟ∆, ΧΑ 91605 • (818) 982−1202 • Τελεξ: 18−2651 • ΦΑΞ (818) 765−3004