TVU005B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TVU005B is a Common Emitter Device Designed for High Linearity Class A Band IV and V Television Transmitters. PACKAGE STYLE .204 4L STUD FEATURES INCLUDE: • High Gain - 13 dB min. • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +150 OC θ JC 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE O 33 C/W CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 10 mA 22 V BV CBO IC = 10 mA 45 V BV EBO IE = 1.0 mA 3.5 V hFE VCE = 5.0 V COB VCB = 28 V PG IMD3 VCE = 20 V IC = 150 mA Pref = 0.5 W f = 860 MHz SOUND = -7.0 dB VISION = -8.0 dB CHROMA = -16 dB IC = 100 mA 20 f = 1.0 MHz 13 --- 200 --- 3.0 pF ---58 dB dBc A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2 Specifications are Subject to change without notic. TVU005B S - PARAMETERS VCE = 20 Volts, S11 ID = 150 mA FREQ. MHz S21 S12 S22 MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 100 0.735 190 13.65 115 0.025 30 0.364 280 200 0.840 188 8.15 100 0.025 30 0.275 240 300 0.860 181 5.75 90 0.025 30 0.280 240 400 0.857 178 4.25 80 0.030 30 0.285 230 500 0.855 173 3.50 70 0.035 35 0.300 225 600 0.850 170 2.80 66 0.035 35 0.310 220 700 0.850 168 2.45 60 0.040 35 0.320 215 800 0.850 165 2.20 55 0.045 40 0.330 210 900 0.855 163 2.00 50 0.050 45 0.340 215 1,000 0.860 161 1.75 45 0.055 45 0.350 215 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2 Specifications are Subject to change without notic.