ASI TVU005B

TVU005B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TVU005B is a Common Emitter
Device Designed for High Linearity
Class A Band IV and V Television
Transmitters.
PACKAGE STYLE .204 4L STUD
FEATURES INCLUDE:
• High Gain - 13 dB min.
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
IC
300 mA
VCB
45 V
PDISS
5.3 W @ TC = 25 OC
TJ
-65 OC to +200 OC
T STG
-65 OC to +150 OC
θ JC
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
O
33 C/W
CHARACTERISTICS
SYMBOL
TC = 25 OC
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV CEO
IC = 10 mA
22
V
BV CBO
IC = 10 mA
45
V
BV EBO
IE = 1.0 mA
3.5
V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
IMD3
VCE = 20 V IC = 150 mA Pref = 0.5 W f = 860 MHz
SOUND = -7.0 dB VISION = -8.0 dB CHROMA = -16 dB
IC = 100 mA
20
f = 1.0 MHz
13
---
200
---
3.0
pF
---58
dB
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/2
Specifications are Subject to change without notic.
TVU005B
S - PARAMETERS
VCE = 20 Volts,
S11
ID = 150 mA
FREQ.
MHz
S21
S12
S22
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.735
190
13.65
115
0.025
30
0.364
280
200
0.840
188
8.15
100
0.025
30
0.275
240
300
0.860
181
5.75
90
0.025
30
0.280
240
400
0.857
178
4.25
80
0.030
30
0.285
230
500
0.855
173
3.50
70
0.035
35
0.300
225
600
0.850
170
2.80
66
0.035
35
0.310
220
700
0.850
168
2.45
60
0.040
35
0.320
215
800
0.850
165
2.20
55
0.045
40
0.330
210
900
0.855
163
2.00
50
0.050
45
0.340
215
1,000
0.860
161
1.75
45
0.055
45
0.350
215
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
2/2
Specifications are Subject to change without notic.