2N3906 Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3904 Ordering Information Type NO. Marking 2N3906 2N3906 Package Code T0-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9011-000 1 2N3906 Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-10µA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -40 - - V Emitter-Base breakdown voltage BVEBO IE=-10µA, IC=0 -5 - - V Collector cut-off current ICEX VCE=-30V, VEB=-3V - - -50 nA DC current gain hFE VCE=-1V, IC=-10mA 100 - 300 - VCE(sat) IC=-50mA, IB=-5mA - - -0.4 V fT VCE=-20V, IC=-10mA, f=100MHz 250 - - MHz VCB=-5V, IE=0, f=1MHz - - 4.5 pF VCC=-3Vdc, VBE(off)=-0.5Vdc, IC=-10mAdc, IB1=-1mAdc - - 35 ns - - 35 ns VCC=-3Vdc,IC=-10mAdc, IB1=IB2=-1mAdc - - 225 ns - - 75 ns Collector-Emitter saturation voltage Transition frequency Collector output capacitance Cob Delay time td Rise time tr Storage time ts Fall Time tf KST-9011-000 2 2N3906 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC KST-9011-000 3