STN2222SF Semiconductor NPN Silicon Transistor Description • General purpose application • Switching application Features • Large collector current • Low collector saturation voltage • Complementary pair with STN2907SF Ordering Information Type NO. Marking STN2222SF Package Code HA SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2070-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 STN2222SF (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V IC 600 mA 350 mW Collector current Collector dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : Package mounted on 99.5% Alumina 10×8×0.1 (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10µA, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=10mA, IB=0 30 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V Collector cut-off current ICBO VCB=60V, IE=0 - - 10 nA DC current gain hFE VCE=10V, IC=10mA 75 - Collector-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob IC=150mA, IB=15mA VCE=20V, IC=20mA VCB=10V, IE=0, f=1MHz KST-2070-000 - 0.4 V 250 - - MHz - 6.0 - pF 2 STN2222SF Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 5 hFE - IC KST-2070-000 3