SBT2222F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907F Ordering Information Type NO. SBT2222F Marking Package Code 1B SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2079-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 SBT2222F Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V IC 600 mA 350 mW Tj 150 °C Tstg -55~150 °C Collector current Collector dissipation PC Junction temperature Storage temperature range * * : Package mounted on 99.5% alumina 10×8×0.6mm Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10µA, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=10mA, IB=0 30 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V Collector cut-off current ICBO VCB=60V, IE=0 - - 20 nA DC current gain hFE VCE=10V, IC=10mA 100 - - - - - 0.4 V 250 - - MHz VCB=10V, IE=0, f=1MHz - - 8 pF VCC=30Vdc, VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc - - 10 ns - - 25 ns VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc - - 225 ns - - 60 ns Collector-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob Delay time td Rise time tr Storage time ts Fall Time tf IC=150mA, IB=15mA VCE=20V, IC=20mA, f=100MHz KST-2079-000 2 SBT2222F Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC Fig. 4 Cob-VCB KST-2079-000 3