AUK SBT2222F

SBT2222F
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• Low Leakage current
• Low collector saturation voltage enabling low voltage operation
• Complementary pair with SBT2907F
Ordering Information
Type NO.
SBT2222F
Marking
Package Code
1B
SOT-23F
Outline Dimensions
unit : mm
2.4±0.1
1.6±0.1
1.90 BSC
KST-2079-000
0.9±0.1
0.15±0.05
2
0.4±0.05
3
0~0.1
2.9±0.1
1
PIN Connections
1. Base
2. Emitter
3. Collector
1
SBT2222F
Ta=25°°C
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
60
V
Collector-Emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
IC
600
mA
350
mW
Tj
150
°C
Tstg
-55~150
°C
Collector current
Collector dissipation
PC
Junction temperature
Storage temperature range
*
* : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=10µA, IE=0
60
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=10mA, IB=0
30
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=10µA, IC=0
5
-
-
V
Collector cut-off current
ICBO
VCB=60V, IE=0
-
-
20
nA
DC current gain
hFE
VCE=10V, IC=10mA
100
-
-
-
-
-
0.4
V
250
-
-
MHz
VCB=10V, IE=0, f=1MHz
-
-
8
pF
VCC=30Vdc, VBE(off)=0.5Vdc,
IC=150mAdc, IB1=15mAdc
-
-
10
ns
-
-
25
ns
VCC=30Vdc,IC=150mAdc,
IB1=IB2=15mAdc
-
-
225
ns
-
-
60
ns
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
Delay time
td
Rise time
tr
Storage time
ts
Fall Time
tf
IC=150mA, IB=15mA
VCE=20V, IC=20mA,
f=100MHz
KST-2079-000
2
SBT2222F
Electrical Characteristic Curves
Fig. 1 PC-Ta
Fig. 2 hFE-IC
Fig. 3 VCE(sat)-IC
Fig. 4 Cob-VCB
KST-2079-000
3