STS1979 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with STS5342 Ordering Information Type NO. Marking STS1979 STS1979 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9051-000 1 STS1979 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -32 V Emitter-Base voltage VEBO -5 V Collector current IC -500 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-100µA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-10mA, IB=0 -32 - - V Emitter-Base breakdown voltage BVEBO IE=-10µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-40V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA DC current gain hFE VCE=-1V, IC=-100mA 120 - 240 - IC=-100mA, IB=-10mA - - -0.25 V VCE=-6V, IC=-20mA - 200 - MHz VCB=-6V, IE=0, f=1MHz - 7.5 - pF Collector-Emitter saturation voltage Transistor frequency Collector output capacitance VCE(sat) fT Cob KST-9051-000 2 STS1979 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 I C - VCE Fig. 4 VCE(sat) - IC Fig. 5 hFE - IC Fig. 6 hFE - KST-9051-000 IC 3