AUK STS1979

STS1979
Semiconductor
PNP Silicon Transistor
Description
• Medium power amplifier
Features
• Large collector current : ICMax=-500mA
• Suitable for low-Voltage operation because of its low saturation voltage
• Complementary pair with STS5342
Ordering Information
Type NO.
Marking
STS1979
STS1979
Package Code
TO-92
Outline Dimensions
unit : mm
3.45±0.1
4.5±0.1
4.5±0.1
2.25±0.1
2.06±0.1
14.0±0.40
0.4±0.02
1.27 Typ.
2.54 Typ.
PIN Connections
1. Emitter
2. Base
3. Collector
0.38
1.20±0.1
1 2 3
KST-9051-000
1
STS1979
(Ta=25°°C)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-40
V
Collector-Emitter voltage
VCEO
-32
V
Emitter-Base voltage
VEBO
-5
V
Collector current
IC
-500
mA
Collector dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
(Ta=25°°C)
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-100µA, IE=0
-40
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-10mA, IB=0
-32
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=-10µA, IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-
-
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-
-
-0.1
µA
DC current gain
hFE
VCE=-1V, IC=-100mA
120
-
240
-
IC=-100mA, IB=-10mA
-
-
-0.25
V
VCE=-6V, IC=-20mA
-
200
-
MHz
VCB=-6V, IE=0, f=1MHz
-
7.5
-
pF
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
VCE(sat)
fT
Cob
KST-9051-000
2
STS1979
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 IC - VBE
Fig. 3 I C - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE - IC
Fig. 6 hFE -
KST-9051-000
IC
3