Z DP030 Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030 • Switching Application Ordering Information Type NO. DP030 Marking DP030 Outline Dimensions Package Code TO-92 unit : mm Z PIN Connections 1. Emitter 2. Collector 3. Base KST-9087-000 1 DP030 Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V Collector current IC -300 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C Electrical Characteristics Characteristic (Ta=25° C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, I E =0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE =-50µA, IC =0 -5 - - V Collector cut-off current ICBO VCB=-12V, I E =0 - - -0.1 µA Emitter cut-off current IEBO VEB =-5V, IC =0 - - -0.1 µA h FE1 VCE=-1V, IC =-100mA 200 - 450 - h FE2 VCE=-1V, IC =-300mA 70 - - - DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat1) IC=-100mA, IB =-10mA - - -0.2 V VCE(sat2) IC=-300mA, IB =-30mA - - -0.5 V VBE(sat1) IC=-100mA, IB =-10mA - - -1.2 V VBE(sat2) IC=-300mA, IB =-30mA - - -1.7 V VCE=-5V, IC =-10mA - 350 - MHz VCB=-10V, I E =0, f=1MHz - 4 - pF fT C ob KST-9087-000 2 DP030 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC-VBE 1V Fig. 3 hFE - IC Fig. 4 IC - VCE Eohhfie Fig. 5 VCE(sat) - IC KST-9087-000 3