STC945 NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with STC733 Ordering Information Type NO. Marking STC945 STC945 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Collector 3. Base 0.38 1.20±0.1 1 2 3 KST-9075-000 1 STC945 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 50 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 40 - - V Emitter-Base breakdown voltage BVEBO IE=50µA, IC=0 5 - - V Collector cut-off current ICBO VCB=50V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 µA DC current gain hFE* VCE=6V, IC=2mA 70 - 700 - - - 0.25 V 80 - - MHz Collector-Emitter saturation voltage Transistion frequency VCE(sat) fT IC=100mA, IB=10mA VCE=10V, IC=1mA Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 2 3.5 pF Noise figure NF VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ - - 10 dB * : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700 KST-9075-000 2 STC945 Electrical Characteristic Curves Fig. 1 PC –Ta Fig. 3 IC -VCE Fig. 2 IC -VBE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC KST-9075-000 3