AUK 2SC5345

2SC5345
Semiconductor
NPN Silicon Transistor
Description
• RF amplifier
Features
• High current transition frequency
fT=550MHz(Typ.), [VCE=6V, IE=-1mA]
• Low output capacitance :
Cob=1.4pF(Typ.) [VCB=6V, IE=0]
• Low base time constant and high gain
• Excellent noise response
Ordering Information
Type NO.
Marking
2SC5345
C5345
Package Code
TO-92
Outline Dimensions
unit : mm
3.45±0.1
4.5±0.1
4.5±0.1
2.25±0.1
2.06±0.1
14.0±0.40
0.4±0.02
1.27 Typ.
2.54 Typ.
PIN Connections
1. Emitter
2. Collector
3. Base
0.38
1.20±0.1
1 2 3
KST-9007-001
1
2SC5345
Ta=25°°C
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
30
V
Collector-Emitter voltage
VCEO
20
V
Emitter-Base voltage
VEBO
4
V
Collector current
IC
20
mA
Collector dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Tstg
-55~150
°C
Storage temperature range
Ta=25°°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=10µA, IE=0
30
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=5mA, IB=0
20
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=10µA, IC=0
4
-
-
V
Collector cut-off current
ICBO
VCB=30V, IE=0
-
-
0.5
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
0.5
µA
40
-
240
-
IC=10mA, IB=1mA
-
-
0.3
V
VCE=6V, IE=-1mA
-
550
-
MHz
VCB=6V, IE=0, f=1MHz
-
1.4
-
pF
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
hFE
*
VCE(sat)
fT
Cob
VCE=6V, IC=1mA
* : hFE rank / R : 40~80, O : 70~140, Y : 120~240
KST-9007-001
2
2SC5345
Electrical Characteristic Curves
Fig. 1 PC –Ta
Fig. 3 hFE-IC
Fig. 5 Cob-VCB, Cib-VEB
Fig. 2 IC-VCE
Fig. 4 fT-IE
Fig. 6 Yie-IC
KST-9007-001
3
2SC5345
Electrical Characteristic Curves
Fig. 7 IC-Yoe
Fig. 8 IC-Yfe
Fig. 9 IC - Yre
KST-9007-001
4