2 STD882D Semiconductor NPN Silicon Transistor Description • • • • Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772D Switching Application Features • Low collector saturation voltage VCE(sat)=0.4V(Max.) Ordering Information Type NO. Marking STD882D STD882 Outline Dimensions Package Code D-PAK unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-D003-000 1 STD882D Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 15 V Emitter-Base voltage VEBO 7 V Collector current(DC) IC(DC) 5 A IC(Pulse) * 8 A Collector dissipation PC 15 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Collector current(Pulse) * * Pulse Test : Pulse Width=10ms (Max.), Duty Cycle=30%(Max.) Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 40 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 15 - - V Emitter-Base breakdown voltage BVEBO IE=50µA, IC=0 7 - - V Collector cut-off current ICBO VCB=30V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 µA DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance 1 VCE=2V, IC=0.5A 160 - 320 - 2 VCE=2V, IC=2A 100 - - - hFE hFE VCE(sat) IC=3A, IB=100mA - - 0.4 V fT VCE=6V, IE=-50mA - 150 - MHz VCB=20V, IE=0, f=1MHz - - 50 pF Cob KST-D003-000 2 STD882D Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 hFE - IC Fig. 3 VCE(sat) - IC Fig. 4 fT - IC Fig. 5 Cob - VCB Fig. 6 Safe operating Area * KST-D003-000 3