STA353 Semiconductor PNP Silicon Transistor Descriptions • High current application • Audio power amplifier Features • High current : IC = -2A • Complementary pair with STC352 Ordering Information Type NO. Marking Package Code STA353 STA353 MPT Outline Dimensions unit : mm 1.2 Max. 12.5 Min. 0.70 Max. 0.4~0.6 1 2 3 2.5±0.1. 0.5±0.2 2.0±0.1 5.0±0.2 3.4±0.2 21.5±1.0 1.1±0.1 8.5±0.2 6.5±0.2 KST-B002-000 PIN Connections 1. Emitter 2. Collector 3. Base 1 STA353 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector current IC -2 A Emitter Current IE 2 A PC ( Tc=25℃) 10 PC ( Ta=25℃) 1.2 Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Collector Power dissipation W Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-100µA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-10mA, IB=0 -30 - - V Emitter-Base breakdown voltage BVEBO IE=-1mA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-40V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA DC current gain hFE* VCE=-2V, IC=-500mA 100 - 320 - VBE(ON) VCE=-2V, IC=-500mA - - -1 V VCE(sat)1 IC=-2A, IB=-0.2A - - -0.8 VCE(sat)2 IC=-1.5A, IB=-0.03A - - -2 fT VCE=-5V, IC=-500mA - 120 - MHz VCB=-10V, IE=0, f=1MHz - 48 - pF Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance Cob V * : hFE rank / O : 100~200, Y : 160~320 KST-B002-000 2 STA353 Electrical Characteristic Curves Fig. 1 PC - TA Fig. 3 fT - IC Fig. 5 hFE - IC Fig. 2 VCE(sat) - IC Fig. 4 COb - VR Fig. 6 IC - VBE KST-B002-000 3 STA353 Fig. 7 Safe Operating Area Fig. 8 PC - TC KST-B002-000 4