STC403D Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VC E ( S A T )=0.4V Max. • High Voltage : VC E O =60V Min. Ordering Information Type NO. STC403D Marking Package Code STC403 D-PAK Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST--D003-000 1 STC403D Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VC B O 80 V Collector-Emitter voltage VC E O 60 V Emitter-base voltage VE B O 5 V Collector current IC 3 A Collector dissipation (Tc=25℃) PC 15 W Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C Electrical Characteristics Characteristic Symbol Collector-Emitter breakdown voltage BVCEO Collector cut-off current Emitter cut-off current DC current gain Test Condition Min. Typ. Max. Unit IC =50mA, IB=0 60 - - V ICBO VCB=60V, IE=0 - - 50 µA IEBO VEB=5V, IC =0 - - 50 µA h FE * VCE=5V, IC =0.5A 200 - 400 - Base-Emitter on voltage VBE(ON) VCE=5V, IC =0.5A - 0.7 1 V Collector-Emitter saturation voltage VCE(sat) IC =2A, IB=0.2A - 0.4 1 V fT VCB=5V, IC =0.5A - 30 - MH VCB=10V, IE=0, f=1MHz - 35 - pF Transition frequency Collector output capacitance Switching Time C ob Turn-on Time Ton - 0.65 - Storage Time Tstg - 1.3 - Tf - 0.65 - Fall Time ㎲ * HFE rank : 200~400 Only KST--D003-000 2 STC403D Electrical Characteristic Curves Fig. 2 VCE - IC Fig. 1 PC - Ta Fig. 3 hFE-IC Fig. 5 IC - VCE Fig. 5 Safe operating Area * Continuous * * ) 1 KST--D003-000 3