STC403 Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE(SAT)=0.4V Typ. • High Voltage : VCEO=60V Min. Ordering Information Type NO. STC403 Marking STC403 Package Code TO-220F Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-H001-001 1 STC403 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 80 V Collector-Emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Collector current IC 3 A Collector dissipation (Tc=25℃) PC 15 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic Symbol Collector-Emitter breakdown voltage BVCEO IC=50mA, IB=0 60 - - V Collector cut-off current ICBO VCB=60V, IE=0 - - 50 µA Emitter cut-off current IEBO VEB=5V, IC=0 - - 50 µA DC current gain hFE * VCE=5V, IC=0.5A 200 - 400 - Base-Emitter on voltage VBE(ON) VCE=5V, IC=0.5A - 0.7 1 V Collector-Emitter saturation voltage VCE(sat) IC=2A, IB=0.2A - 0.4 1 V fT VCB=5V, IC=0.5A - 30 - MH VCB=10V, IE=0, f=1MHz - 20 - pF Transition frequency Collector output capacitance Switching Time Cob Test Condition Min. Typ. Max. Unit Turn-on Time Ton - 0.65 - Storage Time Tstg - 1.3 - Tf - 0.65 - Fall Time ㎲ * hFE rank : 200~400 Only KST-H001-001 2 STC403 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 3 hFE-IC Fig. 2 VCE(sat) - IC Fig. 4 -IC - VCE KST-H001-001 3