CHENMKO ENTERPRISE CO.,LTD CHT858BWPT SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-70/SOT-323 * Surface mount package. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. (2) * Low colloector-emitter saturation. * High saturation current capability. (3) MARKING (1) 1.3±0.1 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 * HFE(Q):RW * HFE(R):RX * HFE(S):RY 0.8~1.1 0.05~0.2 0~0.1 0.1Min. 3 CIRCUIT 2.0~2.45 1 2 SC-70/SOT-323 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − -30 V collector-emitter voltage open base − -30 V VEBO emitter-base voltage open collector − -5 IC collector current (DC) − -0.1 PC Collector power dissipation − 0.2 − 0.35 −55 +150 °C − 150 °C V CBO collector-base voltage V CEO Note.2 Tstg Tj storage temperature junction temperature Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a aX5X0.6mm ceramic board V A W 2004-10 RATING CHARACTERISTIC ( CHT858BWPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER Typ. MAX. − − 15 nA collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-10mA IE =-1uA emitter-base breakdown voltage VCE /I C =-5V/-2 mA current transfer ratio DC I C = -10 mA ; I B = -0.5 mA collector-emitter saturation IC = -100 mA ; I B = -5 mA voltage -30 -30 -5 125 − − − − V V V − − − − − − − -0.6 − 4.5 collector cut-off current VCEsat UNIT MIN. I CBO BVCBO BVCEO BVEBO hFE CONDITIONS IE = 0; VCB = 30 V VBE(on) base-emitter satur ation voltage IC = -10 mA;VCE = -5.0 V Cob collector output capacitance IE = 0; VCB = -10V ; f = 1 MH z − fT transition frequency IE = 20 mA; VCE = - 5 V ; f = 100 MHz − 800 -300 mV -650 mV V -0.75 200 − pF − MHz Note 1. Pulse test: t p ≤ 300 µs; δ ≤ 0.02. 2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800 RATING CHARACTERISTIC CURVES ( CHT858BWPT) COLLECTOR CURRENT : Ic (mA) 100 0.7 80 0.5 0.4 60 0.3 40 0.2 20 iB=0mA 0 0.6 0 0.1 O Ta=25 C 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) 2.0 fig2.Grounded emmitter output characteristics (2) COLLECTOR CURRENT : Ic (mA) fig1.Grounded emmitter output characteristics (1) 10 O 50 Ta=25 C 45 8.0 40 35 6.0 30 25 4.0 20 2.0 15 10 5 IB=0uA 0 0 1.0 COLLECTOR-EMITTER VOLTAGE : VCE (V) 2.0 RATING CHARACTERISTIC CURVES ( CHT858BWPT) fig4.DCcurrent gain VS. collector current (2) fig3.DCcurrent gain VS. collector current (1) 500 500 O Ta=25 C O Ta=25 C hFE-DC CURRENT GAIN 5V 1V 10 5 0.1 100 10 1 I C - COLLECTOR CURRENT (mA) fig5.AC current gain VS. collector current hFE-AC CURRENT GAIN 500 O Ta=25 C VCE=5V f=1KHZ 100 10 5 0.01 0.1 1.0 100 O Ta=125 C O Ta=25 OC Ta=-55 C 10 5 0.1 1000 100 10 O 0.3 0.2 0.1 0 0.1 1.6 O Ta=25 C IC/IB=10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.0 10 I C - COLLECTOR CURRENT (mA) 100 VBE(ON)BASE EMITTER VOLTAGE (V) VBE(Sat)BASE EMITTER SATURATION VOLTAGE (V) 1.8 1000 Ta=25 C IC/IB=10 I C - COLLECTO R CURRENT (mA) fig7.Bass-emitter saturation voltage VS. collector current 10 100 1 I C - COLL ECTOR CURRENT (mA) fig6.Collector-emitter saturation voltage VS. collector current VOLTAGE (V) 100 VCE(SAT)COLLECTOR EMITTER SATURATION hFE-DC CURRENT GAIN VCE=10V 10 1.0 I C - COLLECTO R CURRENT (mA) 100 fig8.Grounded emitter propagation characteristics 1.8 O Ta=25 C VCE=10V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.0 10 I C - COLLECTOR CURRENT (mA) 100 fig9.Input/output capacitance VS. voltage CAPAITANCE(pF) 100 O Ta=25 C f=1MHZ Cib 10 Cob 1 0.5 1 10 REVERSE BIAS VOLTAGE(V) 50 ft-CURRENT GAIN-BANDWIDTH PRODUCT (MHZ) RATING CHARACTERISTIC CURVES ( CHT858BWPT) fig10.Gain bandwidth product VS. collector current 1000 O Ta=25 C VCE=5V 100 10 0.5 1 10 100 Ic-COLLECTOR CURRENT (mA) 500