CHENMKO CHT858BWPT

CHENMKO ENTERPRISE CO.,LTD
CHT858BWPT
SURFACE MOUNT
PNP General Purpose Transistor
VOLTAGE 30 Volts
CURRENT 0.1 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
SC-70/SOT-323
* Surface mount package. (SC-70/SOT-323)
* High current gain.
* Suitable for high packing density.
(2)
* Low colloector-emitter saturation.
* High saturation current capability.
(3)
MARKING
(1)
1.3±0.1
0.65
2.0±0.2
0.65
0.3±0.1
1.25±0.1
* HFE(Q):RW
* HFE(R):RX
* HFE(S):RY
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
3
CIRCUIT
2.0~2.45
1
2
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
-30
V
collector-emitter voltage
open base
−
-30
V
VEBO
emitter-base voltage
open collector
−
-5
IC
collector current (DC)
−
-0.1
PC
Collector power dissipation
−
0.2
−
0.35
−55
+150
°C
−
150
°C
V CBO
collector-base voltage
V CEO
Note.2
Tstg
Tj
storage temperature
junction temperature
Note
1. Transistor mounted on an FR4 printed-circuit board.
2. When mounted on a aX5X0.6mm ceramic board
V
A
W
2004-10
RATING CHARACTERISTIC ( CHT858BWPT)
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
Typ.
MAX.
−
−
15
nA
collector-base breakdown voltage
IC =-10uA
collector-emitter breakdown voltage IC =-10mA
IE =-1uA
emitter-base breakdown voltage
VCE /I C =-5V/-2 mA
current
transfer
ratio
DC
I
C = -10 mA ; I B = -0.5 mA
collector-emitter saturation
IC = -100 mA ; I B = -5 mA
voltage
-30
-30
-5
125
−
−
−
−
V
V
V
−
−
−
−
−
−
−
-0.6
−
4.5
collector cut-off current
VCEsat
UNIT
MIN.
I CBO
BVCBO
BVCEO
BVEBO
hFE
CONDITIONS
IE = 0; VCB = 30 V
VBE(on)
base-emitter satur ation voltage
IC = -10 mA;VCE = -5.0 V
Cob
collector output capacitance
IE = 0; VCB = -10V ; f = 1 MH z
−
fT
transition frequency
IE = 20 mA; VCE = - 5 V ; f = 100 MHz
−
800
-300 mV
-650 mV
V
-0.75
200
−
pF
−
MHz
Note
1. Pulse test: t p ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800
RATING CHARACTERISTIC CURVES ( CHT858BWPT)
COLLECTOR CURRENT : Ic (mA)
100
0.7
80
0.5
0.4
60
0.3
40
0.2
20
iB=0mA
0
0.6
0
0.1
O
Ta=25 C
1.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
2.0
fig2.Grounded emmitter output characteristics (2)
COLLECTOR CURRENT : Ic (mA)
fig1.Grounded emmitter output characteristics (1)
10
O
50
Ta=25 C
45
8.0
40
35
6.0
30
25
4.0
20
2.0
15
10
5
IB=0uA
0
0
1.0
COLLECTOR-EMITTER VOLTAGE : VCE (V)
2.0
RATING CHARACTERISTIC CURVES ( CHT858BWPT)
fig4.DCcurrent gain VS. collector
current (2)
fig3.DCcurrent gain VS. collector
current (1)
500
500
O
Ta=25 C
O
Ta=25 C
hFE-DC CURRENT GAIN
5V
1V
10
5
0.1
100
10
1
I C - COLLECTOR CURRENT (mA)
fig5.AC current gain VS. collector current
hFE-AC CURRENT GAIN
500
O
Ta=25 C
VCE=5V
f=1KHZ
100
10
5
0.01
0.1
1.0
100
O
Ta=125 C
O
Ta=25 OC
Ta=-55 C
10
5
0.1
1000
100
10
O
0.3
0.2
0.1
0
0.1
1.6
O
Ta=25 C
IC/IB=10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1.0
10
I C - COLLECTOR CURRENT (mA)
100
VBE(ON)BASE EMITTER VOLTAGE (V)
VBE(Sat)BASE EMITTER SATURATION
VOLTAGE (V)
1.8
1000
Ta=25 C
IC/IB=10
I C - COLLECTO R CURRENT (mA)
fig7.Bass-emitter saturation voltage
VS. collector current
10
100
1
I C - COLL ECTOR CURRENT (mA)
fig6.Collector-emitter saturation voltage
VS. collector current
VOLTAGE (V)
100
VCE(SAT)COLLECTOR EMITTER SATURATION
hFE-DC CURRENT GAIN
VCE=10V
10
1.0
I C - COLLECTO R CURRENT (mA)
100
fig8.Grounded emitter propagation
characteristics
1.8
O
Ta=25 C
VCE=10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1.0
10
I C - COLLECTOR CURRENT (mA)
100
fig9.Input/output capacitance VS. voltage
CAPAITANCE(pF)
100
O
Ta=25 C
f=1MHZ
Cib
10
Cob
1
0.5
1
10
REVERSE BIAS VOLTAGE(V)
50
ft-CURRENT GAIN-BANDWIDTH PRODUCT (MHZ)
RATING CHARACTERISTIC CURVES ( CHT858BWPT)
fig10.Gain bandwidth product VS. collector
current
1000
O
Ta=25 C
VCE=5V
100
10
0.5
1
10
100
Ic-COLLECTOR CURRENT (mA)
500