KTK5132V SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. B 1.5V. D G 1 3 K H A 2 P ) SYMBOL RATING UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGSS 20 V DC Drain Current ID 100 mA Drain Power Dissipation PD 100 mW Channel Temperature Tch 150 Storage Temperature Range Tstg -55 150 5 J CHARACTERISTIC MILLIMETERS _ 0.05 1.2 + _ 0.05 0.8 + _ 0.05 0.5 + _ 0.05 0.3 + _ 0.05 1.2 + _ 0.05 0.8 + 0.40 _ 0.05 0.12 + _ 0.05 0.2 + C MAXIMUM RATING (Ta=25 P DIM A B C D E G H J K P 1. SOURCE 2. GATE 3. DRAIN VSM EQUIVALENT CIRCUIT D Marking Type Name G KB S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL IGSS Gate Leakage Current TEST CONDITION VGS= 16V, VDS=0V MIN. TYP. MAX. UNIT - - 1 A V(BR)DSS ID=100 A, VGS=0V 30 - - V Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 A Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V Forward Transfer Admittance |Yfs| VDS=3V, ID=10mA 25 - - mS Drain-Source ON Resistance RDS(ON) ID=10mA, VGS=2.5V - 4 7 Drain-Source Breakdown Voltage Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 8.5 - pF Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 3.3 - pF Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 9.3 - pF - 50 - nS - 180 - nS Switching Time 2003. 7. 4 Turn-on Time ton Turn-off Time toff Revision No : 0 VDD=5V, ID=10mA, VGS=0 5V 1/3 KTK5132V I D - V DS I D - V DS 2.5V 2.2V 80 60 2.0V 1.8V 40 1.6V 20 1.4V VGS =1.2V 0 0 4 2 6 8 1.15V 0.6 1.1V 0.4 1.05V 0.2 1.0V 10 12 0 0.1 D I DR G 0.1 S 0.03 0 -0.4 -0.8 -1.2 10 3 C Ta=25 C 100 VGS =0 COMMON SOURCE V DS =3V 30 1 Ta= 10 0.3 Y fs Ta=-25 C 0.1 0.03 0.01 -1.6 0 1 3 100 5 COMMON SOURCE VGS =0 f=1MHz Ta=25 C CAPACITANCE C (pF) 50 50 30 10 5 10 4 C - V DS - ID Ta=25 C 5 2 GATE-SOURCE VOTAGE VGS (V) COMMON SOURCE V DS =3V 3 Ta=25 C 0.3 DRAIN-SOURCE VOTAGE V DS (V) fs 0.6 I D - VGS COMMON SOURCE 1 0.5 I DR - VDS 30 100 0.4 DRAIN-SOURCE VOLTAGE V DS (V) 1 FORWARD TRANSFER ADMITTANCE Y (mS) 0.3 DRAIN-SOURCE VOLTAGE VDS (V) 3 30 DRAIN CURRENT I D (mA) 2003. 7. 4 0.2 100 300 COMMON SOURCE Ta=25 C 1.2V VGS =0.9V 100 0.01 2.5V 0.8 0 DRAIN CURRENT ID (mA) DRAIN REVERSE CURRENT I DR (mA) 1.0 COMMON SOURCE Ta=25 C DRAIN CURRENT ID (mA) DRAIN CURRENT I D (mA) 100 (LOW VOLTAGE REGION) Revision No : 0 50 100 30 C oss C iss 10 5 3 1 0.1 C rss 0.3 0.5 1 3 5 10 20 DRAIN-SOURCE VOLTAGE VDS (V) 2/3 KTK5132V VDS(ON) - I D 1K 0.1 0.05 0.03 500 300 t on tr t off tf 100 50 5V V IN 0 10µs 30 0.01 0.005 1 3 5 10 30 50 100 10 1 ID 3 DRAIN CURRENT I D (mA) VDD =5V D.U. < = 1% VIN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C VOUT RL 1 0.5 0.3 50Ω COMMON SOURCE VGS =2.5V Ta=25 C SWITCHING TIME t (ns) DRAIN-SOURCE ON VOLTAGE VDS(ON) (V) 2 t - ID VDD 5 10 30 50 100 DRAIN CURRENT I D (mA) DRAIN POWER DISSIPATION PD (mW) PD - Ta 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT ID 5V VOUT D.U. < = 1% VIN VIN RL 50Ω (Z OUT =50Ω) COMMON SOURCE VDD Ta=25 C 5V 0 V IN :t r , t f < 5ns 0 10µs VIN VDD =5V 90% 10% VDD 10% VOUT 90% VDS (ON) t on 2003. 7. 4 Revision No : 0 tf tr t off 3/3