SEMICONDUCTOR KTK5134S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E B FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode. L D L 3 H G A 2 1 Q J K MAXIMUM RATING (Ta=25℃) CHARACTERISTIC P N C P SYMBOL RATING UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGSS ±20 V DC Drain Current ID 200 mA Drain Power Dissipation PD 200 mW Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg -55～150 ℃ DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. SOURCE 2. GATE 3. DRAIN SOT-23 EQUIVALENT CIRCUIT D Marking Lot No. G KD Type Name S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL IGSS Gate Leakage Current TEST CONDITION VGS=±16V, VDS=0V MIN. TYP. MAX. UNIT - - ±1 μA V(BR)DSS ID=100μA, VGS=0V 30 - - V Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 μA Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V Forward Transfer Admittance |Yfs| VDS=3V, ID=50mA 100 - - mS Drain-Source ON Resistance RDS(ON) ID=50mA, VGS=2.5V - 1.2 2 Ω Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 70 - pF Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 23 - pF Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 58 - pF - 60 - nS - 120 - nS Drain-Source Breakdown Voltage Turn-on Time ton Switching Time Turn-off Time 2001. 10. 29 Revision No : 0 toff VDD=3V, ID=10mA, VGS=0～2.5V 1/3 KTK5134S 2001. 10. 29 Revision No : 0 2/3 KTK5134S 2001. 10. 29 Revision No : 0 3/3