STS8050 Semiconductor NPN Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8550 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9012-000 1 STS8050 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 30 V Collector-Emitter voltage VCEO 25 V Emitter-Base voltage VEBO 6 V Collector current IC 800 mA Emitter current IE -800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=500µA, IE=0 30 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 25 - - V Collector cut-off current ICBO VCB=15V, IE=0 - - 50 nA DC current gain h VCE=1V, IC=50mA 85 - 300 - IC=500mA, IB=50mA - - 0.5 V VCE=1V, IC=500mA - - 1.2 V VCE=5V, IC=10mA - 120 - MHz VCB=10V, IE=0, f=1MHz - 19 - pF Collector-Emitter saturation voltage * FE VCE(sat) Base-Emitter voltage VBE Transition frequency fT Collector output capacitance * : hFE Rank Cob / B : 85~160, C : 120~200, D : 160~300 KST-9012-000 2 STS8050 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 5 hFE - IC KST-9012-000 3