SPS92 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=-300V • Complementary pair with SPS42 Ordering Information Type NO. Marking SPS92 SPS92 Package Code T0-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9049-000 1 SPS92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -300 V Collector-Emitter voltage VCEO -300 V Emitter-Base voltage VEBO -6 V Collector current IC -500 mA Emitter current IE 500 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-100µA, IE=0 -300 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -300 - - V Emitter-Base breakdown voltage BVEBO IE=-100µA, IC=0 -6 - - V Collector cut-off current ICBO VCB=-200V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-3V, IC=0 - - -0.1 µA DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance * VCE=-10V, IC=-30mA 40 - - - VCE(sat) * IC=-20mA, IB=-2mA - - -0.5 V VBE(sat) * IC=-20mA, IB=-2mA - - -0.9 V VCE=-20V, IC=-10mA 50 - - MHz - - 6 pF hFE fT Cob VCB=-20V, IE=0, f=1MHz * : Pulse Tester : Pulse Width≤ 300 ㎲, Duty Cycle≤ 2.0% KST-9049-000 2 SPS92 Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(sat),VBE(sat) - IC Fig. 4 Cob - VR Fig. 3 fT - IC KST-9049-000 3