STN2222AS Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current • Low collector saturation voltage • Complementary pair with STN2907AS Ordering Information Type NO. STN2222AS Marking Package Code XA SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 2.9±0.1 1.90 Typ. 1 3 0.4 Typ. 2 0.45~0.60 -0.03 +0.05 KST-2057-001 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. PIN Connections 1. Base 2. Emitter 3. Collector 1 STN2222AS (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 5 V IC 600 mA 350 mW Collector current Collector dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : Package mounted on 99.5% Alumina 10×8×0.1 (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10µA, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=10mA, IB=0 40 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V Collector cut-off current ICBO VCB=60V, IE=0 - - 10 nA DC current gain hFE VCE=10V, IC=10mA 75 - Collector-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob IC=150mA, IB=15mA VCE=20V, IC=20mA VCB=10V, IE=0, f=1MHz KST-2057-001 - 0.4 V 250 - - MHz - 6.0 - pF 2 STN2222AS Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 5 hFE - IC KST-2057-001 3