SBT92 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 Ordering Information Type NO. Marking SBT92 Package Code M2A SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 2.9±0.1 1.90 Typ. 1 3 0.4 Typ. 2 0.45~0.60 -0.03 +0.05 KST-2041-002 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. PIN Connections 1. Base 2. Emitter 3. Collector 1 SBT92 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -300 V Collector-Emitter voltage VCEO -300 V Emitter-Base voltage VEBO -6 V Collector current IC -500 mA Emitter current IE 500 mA 350 mW Collector dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : Package mounted on 99.5% alumina 10×8×0.6mm (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-100µA, IE=0 -300 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -300 - - V Emitter-Base breakdown voltage BVEBO IE=-100µA, IC=0 -6 - - V Collector cut-off current ICBO VCB=-200V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-3V, IC=0 - - -0.1 µA DC current gain * VCE=-10V, IC=-30mA 40 - - - Collector-Emitter saturation voltage VCE(sat) * IC=-20mA, IB=-2mA - - -0.5 V Base-Emitter saturation voltage VBE(sat) * IC=-20mA, IB=-2mA - - -0.9 V fT VCE=-20V, IC=-10mA 50 - - MHz - - 6 pF Transition frequency Collector output capacitance hFE Cob VCB=-20V, IE=0, f=1MHz * : Pulse Tester : Pulse Width≤300 ㎲, Duty Cycle≤2.0% KST-2041-002 2 SBT92 Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(sat),VBE(sat) - IC Fig. 4 Cob - VR Fig. 3 fT - IC KST-2041-002 3