AUK SBT92

SBT92
Semiconductor
PNP Silicon Transistor
Descriptions
• High voltage application
• Telephone application
Features
• Collector-Emitter voltage :
VCEO=SBT92 : -300V
• Complementary pair with SBT42
Ordering Information
Type NO.
Marking
SBT92
Package Code
M2A
SOT-23
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
2.9±0.1
1.90 Typ.
1
3
0.4 Typ.
2
0.45~0.60
-0.03
+0.05
KST-2041-002
0.124
0~0.1
0.38
1.12 Max.
0.2 Min.
PIN Connections
1. Base
2. Emitter
3. Collector
1
SBT92
(Ta=25°°C)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-300
V
Collector-Emitter voltage
VCEO
-300
V
Emitter-Base voltage
VEBO
-6
V
Collector current
IC
-500
mA
Emitter current
IE
500
mA
350
mW
Collector dissipation
PC
*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
* : Package mounted on 99.5% alumina 10×8×0.6mm
(Ta=25°°C)
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-100µA, IE=0
-300
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-300
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=-100µA, IC=0
-6
-
-
V
Collector cut-off current
ICBO
VCB=-200V, IE=0
-
-
-0.1
µA
Emitter cut-off current
IEBO
VEB=-3V, IC=0
-
-
-0.1
µA
DC current gain
*
VCE=-10V, IC=-30mA
40
-
-
-
Collector-Emitter saturation voltage
VCE(sat)
*
IC=-20mA, IB=-2mA
-
-
-0.5
V
Base-Emitter saturation voltage
VBE(sat) *
IC=-20mA, IB=-2mA
-
-
-0.9
V
fT
VCE=-20V, IC=-10mA
50
-
-
MHz
-
-
6
pF
Transition frequency
Collector output capacitance
hFE
Cob
VCB=-20V, IE=0, f=1MHz
* : Pulse Tester : Pulse Width≤300 ㎲, Duty Cycle≤2.0%
KST-2041-002
2
SBT92
Electrical Characteristic Curves
Fig. 1 hFE -
IC
Fig. 2 VCE(sat),VBE(sat) - IC
Fig. 4 Cob - VR
Fig. 3 fT - IC
KST-2041-002
3