BF423 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Monitor equipment application Features • Collector-Emitter voltage : VCEO=-250V • Complementary pair with BF422 Ordering Information Type NO. Marking Package Code BF423 TO-92 BF423 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Collector 3. Base 0.38 1.20±0.1 1 2 3 KST-9066-000 1 BF423 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -250 V Collector-Emitter voltage VCEO -250 V Emitter-base VEBO -5 V Collector current IC -100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic Symbol Collector-Emitter breakdown voltage BVCEO Test Condition IC=-1mA, IB=0 Min. Typ. Max. Unit -250 - - V Collector cut-off current ICBO VCB=-200V, IE=0 - - -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -100 nA DC current gain hFE VCE=-20V, IC=-25mA 50 - - - VCE(sat) IC=-30mA, IB=-5mA - - -0.6 V fT VCE=-20V, IC=-10mA, f=100MHz - 100 - MHz VCB=-20V, IE=0, f=1MHz - 1 - pF Collector-Emitter saturation voltage Transistor frequency Collector output capacitance Cob KST-9066-000 2