7 STS9014 Semiconductor NPN Silicon Transistor Description • General purpose application • Switching application Features • Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz • Complementary pair with STS9015 Ordering Information Type NO. Marking STS9014 STS9014 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9017-000 1 STS9014 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Emitter current IE -150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=50V, IE=0 - - 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 - - 100 nA 100 - 1000 - - 0.1 0.25 V 60 - - MHz DC current gain Collector-Emitter saturation voltage Transistion frequency Collector output capacitance Noise figure * hFE VCE(sat) fT VCE=5V, IC=1mA IC=100mA, IB=10mA VCE=10V, IC=1mA Cob VCB=10V, IE=0, f=1MHz - 2 3.5 pF NF VCB=6V, IC=0.1mA, f=1KHz, Rg=10KΩ - - 10 dB * : hFE rank / B : 100 ~ 300, C : 200 ~ 600, D : 400 ~ 1000. KST-9017-000 2 STS9014 Electrical Characteristic Curves Fig. 1 PC –Ta Fig. 2 IC -VBE 5 Fig. 3 IC -VCE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC KST-9017-000 3