AUK DP030S

DP030S
Semiconductor
PNP Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage
( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA)
• Suitable for low voltage large current drivers
• Excellent hFE Linearity
• Complementary pair with DN030S
• Switching Application
Ordering Information
Type NO.
Marking
DP030S
Package Code
P01
SOT-23F
Outline Dimensions
unit : mm
2.4±0.1
1.6±0.1
1.90 BSC
0.9±0.1
0.15±0.05
2
0.4±0.05
3
0~0.1
2.9±0.1
1
KST-2108-000
PIN Connections
1. Base
2. Emitter
3. Collector
1
DP030S
(Ta=25°°C)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-15
V
Collector-Emitter voltage
VCEO
-12
V
Emitter-Base voltage
VEBO
-5
V
Collector current
IC
-300
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
(Ta=25°°C)
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-50µA, IE=0
-15
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-12
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=-50µA, IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-12V, IE=0
-
-
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-
-
-0.1
µA
hFE1
VCE=-1V, IC=-100mA
200
-
450
-
hFE2
VCE=-1V, IC=-300mA
70
-
-
V
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat1)
IC=-100mA, IB=-10mA
-
-
-0.2
VCE(sat2)
IC=-300mA, IB=-30mA
-
-
-0.5
VBE(sat1)
IC=-100mA, IB=-10mA
-
-
-1.2
V
VBE(sat2)
IC=-300mA, IB=-30mA
-
-
-1.7
V
VCE=-5V, IC=-10mA
-
350
-
MHz
VCB=-10V, IE=0, f=1MHz
-
4
-
pF
fT
Cob
KST-2108-000
2
DP030S
Electrical Characteristic Curves
Fig. 2 IC-VBE
Fig. 1 PC - Ta
1V
Fig. 3 hFE
-
IC
Fig. 4 IC - VCE
Eohhfie
Fig. 5 VCE(sat) - IC
KST-2108-000
3