BB OPA820IDBVR

OPA820
SBOS303A − JUNE 2004 − REVISED JULY 2004
Unity-Gain Stable, Low-Noise, Voltage-Feedback
Operational Amplifier
FEATURES
D
D
D
D
D
D
DESCRIPTION
HIGH BANDWIDTH (240MHz, G = +2)
HIGH OUTPUT CURRENT (±110mA)
LOW INPUT NOISE (2.5nV/√Hz)
LOW SUPPLY CURRENT (5.6mA)
FLEXIBLE SUPPLY VOLTAGE
Dual ±2.5V to ±6V
Single +5V to +12V
EXCELLENT DC ACCURACY
Maximum 25°C Input Offset Voltage = ±750µV
Maximum 25°C Input Offset Current = ±400nA
APPLICATIONS
D
D
D
D
D
D
D
D
D
LOW-COST VIDEO LINE DRIVERS
ADC PREAMPLIFIERS
ACTIVE FILTERS
LOW-NOISE INTEGRATORS
PORTABLE TEST EQUIPMENT
OPTICAL CHANNEL AMPLIFIERS
LOW-POWER, BASEBAND AMPLIFIERS
CCD IMAGING CHANNEL AMPLIFIERS
OPA650 AND OPA620 UPGRADE
The OPA820 provides a wideband, unity-gain stable,
voltage-feedback amplifier with a very low input noise voltage
and high output current using a low 5.6mA supply current. At
unity-gain, the OPA820 gives > 800MHz bandwidth with < 1dB
peaking. The OPA820 complements this high-speed
operation with excellent DC precision in a low-power device.
A worst-case input offset voltage of ±750µV and an offset
current of ±400nA give excellent absolute DC precision for
pulse amplifier applications.
Minimal input and output voltage swing headroom allow the
OPA820 to operate on a single +5V supply with > 2VPP output
swing. While not a rail-to-rail (RR) output, this swing will
support most emerging analog-to-digital converter (ADC)
input ranges with lower power and noise than typical RR
output op amps.
Exceptionally low dG/dP (0.01%/0.03°) supports low-cost
composite video line driver applications. Existing designs can
use the industry-standard pinout SO-8 package while
emerging high-density portable applications can use the
SOT23-5. Offering the industry’s lowest thermal impedance in
a SOT package, along with full specification over both the
commercial and industrial temperature ranges, gives solid
performance over a wide temperature range.
RELATED PRODUCTS
SINGLES
DUALS
TRIPLES
QUADS
OPA354
OPA690
—
—
—
OPA2354
OPA2690
OPA2652
OPA2822
—
—
OPA3690
—
—
—
OPA4354
—
—
—
OPA4820
FEATURES
CMOS RR Output
High Slew Rate
SOT23-8
Low Noise
Quad OPA820
+5V
+5V
2kΩ
RS
0.1µF 24.9Ω
VIN
REFT
(+3V)
2kΩ
IN
OPA820
50Ω
100pF
ADS850
14−Bit
10MSPS
−5V
402Ω
2kΩ
IN
0.1µF
402Ω
2kΩ
(+2V)
REFB
(+1V)
VREF
SEL
AC-Coupled, 14-Bit ADS850 Interface
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
Copyright  2004, Texas Instruments Incorporated
! ! www.ti.com
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ABSOLUTE MAXIMUM RATINGS(1)
Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6.5VDC
Internal Power Dissipation . . . . . . . . . . . . See Thermal Information
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.2V
Input Common-Mode Voltage Range . . . . . . . . . . . . . . . . . . . . ±VS
Storage Temperature Range . . . . . . . . . . . . . . . . . −40°C to +125°C
Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
ESD Rating
Human Body Model (HBM) . . . . . . . . . . . . . . . . . . . . . . +3000V
Charge Device Model (CDM) . . . . . . . . . . . . . . . . . . . . +1000V
Machine Model (MM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300V
(1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not supported.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
PRODUCT
PACKAGE-LEAD
PACKAGE
DESIGNATOR(1)
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
OPA820
SO-8
D
−45°C to +85°C
OPA820
OPA820ID
Rails, 100
″
″
″
″
″
OPA820IDR
Tape and Reel, 2500
OPA820
SOT23-5
DBV
−45°C to +85°C
NSO
OPA820IDBVT
Tape and Reel, 250
″
″
″
″
″
OPA820IDBVR
Tape and Reel, 3000
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
(1) For the most current specification and package information, refer to our web site at www.ti.com.
PIN CONFIGURATION
1
8
NC
Inverting Input
2
7
+VS
Noninverting Input
3
6
Output
−VS
4
5
NC
SOT
Output
1
−VS
2
Noninverting Inut
3
5
NC
Top View
+VS
4
Inverting Input
2
NSO
1
NC = No Connection
5
4
SO
3
Top View
Pin Orientation/Package Marking
2
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
ELECTRICAL CHARACTERISTICS: VS = ±5V
Boldface limits are tested at +25°C.
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
OPA820ID, IDBV
TYP
PARAMETER
AC PERFORMANCE
Small-Signal Bandwidth
Gain-Bandwidth Product
Bandwidth for 0.1dB Gain Flatness
Peaking at a Gain of +1
Large-Signal Bandwidth
Slew Rate
Rise Time and Fall Time
Settling Time to 0.02%
to 0.1%
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
Input Current Noise
Differential Gain
Differential Phase
DC PERFORMANCE(4)
Open-Loop Voltage Gain (AOL)
Input Offset Voltage
Average Input Offset Voltage Drift
Input Bias Current
Average Input Bias Current Drift
Input Offset Current
Inverting Input Bias Current Drift
INPUT
Common-Mode Input Range (CMIR)(5)
Common-Mode Rejection Ratio
Input Impedance
Differential Mode
Common Mode
OUTPUT
Output Voltage Swing
Output Current
Short-Circuit Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Specified Operating Voltage
Maximum Operating Voltage
Maximum Quiescent Current
Minimum Quiescent Current
Power-Supply Rejection Ratio (−PSRR)
THERMAL CHARACTERISTICS
Specification: ID, IDBV
Thermal Resistance, qJA
D
SO-8
DBV
SOT23-5
MIN/MAX OVER TEMPERATURE
+25°C(1)
0°C to
70°C(2)
−40°C to
+85°C(2)
170
23
220
160
21
204
155
20
200
192
186
180
−85
−90
−95
−110
2.5
1.7
0.01
0.03
−81
−85
−90
−105
2.7
2.6
−80
−83
−89
−102
2.8
2.8
66
±0.2
62
±0.75
−9
−17
±100
±400
VCM = 0V, Input-Referred
±4.0
85
±3.8
76
VCM = 0V
VCM = 0V
18  0.8
6  1.0
No Load
RL = 100Ω
VO = 0
Output Shorted to Ground
G = +2, f ≤ 100kHz
±3.7
±3.6
±110
±125
0.04
CONDITIONS
+25°C
G = +1, VO = 0.1VPP, RF = 0Ω
G = +2, VO = 0.1VPP
G = +10, VO = 0.1VPP
G ≥ 20
G = +2, VO = 0.1VPP
VO = 0.1VPP, RF = 0
G = +2, VO = 2VPP
G = +2, 2V Step
G = +2, VO = 0.2V Step
G = +2, VO = 2V Step
G = +2, VO = 2V Step
G = +2, f = 1MHz, VO = 2VPP
RL = 200Ω
RL ≥ 500Ω
RL = 200Ω
RL ≥ 500Ω
f > 100kHz
f > 100kHz
G = +2, PAL, VO = 1.4VPP, RL = 150Ω
G = +2, PAL, VO = 1.4VPP, RL = 150Ω
800
240
30
280
38
0.5
85
240
1.5
22
18
VO = 0V, Input-Referred
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
VCM = 0V
UNITS
MHz
MHz
MHz
MHz
MHz
dB
MHz
V/µs
ns
ns
ns
typ
min
min
min
typ
typ
typ
min
typ
typ
typ
C
B
B
B
C
C
C
B
C
C
C
−79
−81
−88
−100
2.9
3.0
dBc
dBc
dBc
dBc
nV/√Hz
pA/√Hz
%
°
max
max
max
max
max
max
typ
typ
B
B
B
B
B
B
C
C
61
±1.0
4
−19
30
±600
5
60
±1.2
4
−23
50
±700
5
dB
mV
µV/°C
µΑ
nA/°C
nA
nA/°C
min
max
max
max
max
max
max
A
A
B
A
B
A
B
±3.7
75
±3.6
73
V
dB
min
min
A
A
kΩ  pF
MΩ  pF
typ
typ
C
C
V
V
mA
mA
Ω
min
min
min
typ
typ
A
A
A
C
C
V
v
mA
mA
dB
typ
max
max
min
min
C
A
A
A
A
°C
typ
C
°C/W
°C/W
typ
typ
C
C
±3.5
±3.5
±90
±3.45
±3.45
±80
±3.4
±3.4
±75
±6.0
5.75
5.45
64
±6.0
6.2
5.0
63
±6.0
6.4
4.8
62
±5
VS = ±5V
VS = ±5V
Input Referred
5.6
5.6
72
−40 to +85
Junction-to-Ambient
Junction-to-Ambient
125
150
TEST
LEVEL
MIN/
MAX
(3)
(1)
Junction temperature = ambient for +25°C specifications.
Junction temperature = ambient at low temperature limits; junction temperature = ambient +9°C at high temperature limit for over temperature.
Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only
for information.
(4) Current is considered positive out-of-node. V
CM is the input common-mode voltage.
(5) Tested < 3dB below minimum specified CMRR at ± CMIR limits.
(2)
(3)
3
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
ELECTRICAL CHARACTERISTICS: VS = +5V
Boldface limits are tested at +25°C.
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
OPA820ID, IDBV
TYP
PARAMETER
AC PERFORMANCE
Small-Signal Bandwidth
Gain-Bandwidth Product
Peaking at a Gain of 1
Large-Signal Bandwidth
Slew Rate
Rise Time and Fall Time
Settling Time to 0.02%
to 0.1%
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
Input Current Noise
DC PERFORMANCE(4)
Open-Loop Voltage Gain (AOL)
Input Offset Voltage
Average Input Offset Voltage Drift
Input Bias Current
Average Input Bias Current Drift
Input Offset Current
Inverting Input Bias Current Drift
INPUT
Least Positive Input Voltage
Most Positive Input Voltage
Common-Mode Rejection Ratio (CMRR)
Input Impedance
Differential Mode
Common Mode
OUTPUT
Most Positive Output Voltage
Least Positive Output Voltage
Output Current
Short-Circuit Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Specified Operating Voltage
Maximum Operating Voltage
Maximum Quiescent Current
Minimum Quiescent Current
Power-Supply Rejection Ratio (+PSRR)
THERMAL CHARACTERISTICS
Specification: ID, IDBV
Thermal Resistance, qJA
D
SO-8
DBV
SOT23-5
MIN/MAX OVER TEMPERATURE
+25°C(1)
0°C to
70°C(2)
−40°C to
+85°C(2)
168
21
200
155
20
190
151
19
185
145
140
135
−80
−83
−100
−98
2.5
1.6
−76
−79
−92
−95
2.8
2.5
−75
−77
−91
−93
2.9
2.7
65
±0.3
60
±1.1
−8
−16
±100
±400
VCM = 2.5V, Input-Referred
0.9
4.5
83
1.1
4.2
74
VCM = 2.5V
VCM = 2.5V
15  1
5  1.3
No Load
RL = 100Ω to 2.5V
No Load
RL = 100Ω to 2.5V
VO = 2.5V
Output Shorted to Ground
G = +2, f ≤ 100kHz
+3.9
+3.8
+1.2
+1.2
±105
±115
0.04
CONDITIONS
+25°C
G = +1, VO = 0.1VPP, RF = 0Ω
G = +2, VO = 0.1VPP
G = +10, VO = 0.1VPP
G ≥ 20
VO = 0.1VPP, RF = 0Ω
G = +2, VO = 2VPP
G = +2, 2V Step
G = +2, VO = 2V Step
G = +2, VO = 2V Step
G = +2, VO = 2V Step
G = +2, f = 1MHz, VO = 2VPP
RL = 200Ω
RL ≥ 500Ω
RL = 200Ω
RL ≥ 500Ω
f > 100kHz
f > 100kHz
550
230
28
260
0.5
70
200
1.7
24
21
VO = 2.5V, RL = 100Ω
VCM = 2.5V
VCM = 2.5V
VCM = 2.5V
VCM = 2.5V
VCM = 2.5V
VCM = 2.5V
UNITS
MHz
MHz
MHz
MHz
dB
MHz
V/µs
ns
ns
ns
typ
min
min
min
typ
typ
min
typ
typ
typ
C
B
B
B
C
C
B
C
C
C
−74
−75
−90
−92
3.0
2.9
dBc
dBc
dBc
dBc
nV/√Hz
pA/√Hz
max
max
max
max
max
max
B
B
B
B
B
B
59
±1.4
4
−18
30
±600
5
58
±1.6
4
−22
50
±700
5
dB
mV
µV/°C
µΑ
nA/°C
nA
nA/°C
min
max
max
max
max
max
max
A
A
B
A
B
A
B
1.2
4.1
73
1.3
4.0
72
V
V
dB
min
max
min
A
A
A
kΩ  pF
MΩ  pF
typ
typ
C
C
V
V
V
V
mA
mA
Ω
min
min
max
max
min
typ
typ
A
A
A
A
A
C
C
V
V
mA
mA
dB
typ
max
max
min
typ
C
A
A
A
C
°C
typ
C
°C/W
°C/W
typ
typ
C
C
+3.8
+3.7
+1.3
+1.3
±80
+3.75
+3.65
+1.35
+1.35
±70
+3.7
+3.6
+1.4
+1.4
±65
+12
5.4
4.4
+12
5.5
4.25
+12
5.6
4.1
+5
VS = +5V
VS = +5V
Input-Referred
5.0
5.0
68
−40 to +85
Junction-to-Ambient
Junction-to-Ambient
125
150
TEST
LEVEL
MIN/
MAX
(3)
(1) Junction temperature = ambient for +25°C specifications.
(2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +7°C at high temperature limit for over temperature.
(3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only
for information.
(4) Current is considered positive out-of-node. VCM is the input common-mode voltage.
(5) Tested < 3dB below minimum specified CMRR at ± CMIR limits.
4
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
TYPICAL CHARACTERISTICS: VS = ±5V
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
NONINVERTING SMALL−SIGNAL FREQUENCY RESPONSE
3
0
G = −1
0
G = +5
−3
Normalized Gain (dB)
G = +2
−6
G = +10
−9
−12
VO = 0.1VPP
RL = 100Ω
See Figure 1
−15
G = −2
−3
G = −5
−6
−9
G = −10
−12
VO = 0.1VPP
RL = 100Ω
See Figure 2
−15
−18
−18
1M
10M
100M
1G
1
10
Frequency (Hz)
NONINVERTING LARGE−SIGNAL FREQUENCY RESPONSE
9
VO = 0.5VPP
−3
VO = 1VPP
0
Gain (dB)
Gain (dB)
VO = 0.5VPP
0
3
VO = 2VPP
−3
VO = 4VPP
−6
VO = 1VPP
−6
VO = 2VPP
−9
VO = 4VPP
−12
G = +2
RL = 100Ω
See Figure 1
−9
G = −1
RL = 100Ω
See Figure 2
−15
−12
−18
1
10
100
500
1
10
Frequency (MHz)
0.2
1.5
1.0
0.1
0.5
Small Signal ± 100mV
Left Scale
0
−0.1
0
−0.5
−0.2
−1.0
G = +2
See Figure 1
−1.5
−0.4
−2.0
Time (10ns/div)
Small−Signal Output Voltage (100mV/div)
Large Signal ± 1V
Right Scale
0.3
500
INVERTING PULSE RESPONSE
2.0
Large−Signal Output Voltage (500mV/div)
0.4
100
Frequency (MHz)
NONINVERTING PULSE RESPONSE
Small−Signal Output Voltage (100mV/div)
500
INVERTING LARGE−SIGNAL FREQUENCY RESPONSE
3
6
−0.3
100
Frequency (MHz)
0.4
0.3
2.0
G = −1
See Figure 2
1.5
0.2
1.0
0.1
0
−0.1
−0.2
−0.3
0.5
Small Signal ± 100mV
Left Scale
Large Signal ± 1V
Right Scale
−0.4
0
−0.5
−1.0
−1.5
−2.0
Large−Signal Output Voltage (500mV/div)
Normalized Gain (dB)
INVERTING SMALL−SIGNAL FREQUENCY RESPONSE
3
G = +1
RF = 0Ω
Time (10ns/div)
5
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
TYPICAL CHARACTERISTICS: VS = ±5V (continued)
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
HARMONIC DISTORTION vs LOAD RESISTANCE
f = 1MHz
VO = 2VPP
G = +2V/V
−75
−80
2nd−Harmonic
−85
−90
3rd−Harmonic
−95
See Figure 1
−100
100
1MHz HARMONIC DISTORTION vs SUPPLY VOLTAGE
−75
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
−70
−80
2nd−Harmonic
−85
−90
3rd−Harmonic
−95
−100
See Figure 1
−105
2.5
1k
3.0
3.5
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
2nd−Harmonic
−75
−80
−85
−90
3rd−Harmonic
−95
6.0
f = 1MHz
R L = 200Ω
G = +2V/V
−80
−85
−90
2nd−Harmonic
−95
−100
3rd−Harmonic
See Figure 1
See Figure 1
−105
0.1
1
−110
0.1
10
1
HARMONIC DISTORTION vs NONINVERTING GAIN
f = 1MHz
RL = 200Ω
VO = 2VPP
−75
−80
HARMONIC DISTORTION vs INVERTING GAIN
−70
2nd−Harmonic
Harmonic Distortion (dBc)
−70
−85
−90
3rd−Harmonic
−95
−100
−105
1
−75
2nd−Harmonic
−80
−85
3rd−Harmonic
−90
−95
−100
10
Gain (V/V)
f = 1MHz
RL = 200Ω
VO = 2VPP
See Figure 2
See Figure 1
−110
10
Output Voltage (VPP)
Frequency (MHz)
Harmonic Distortion (dBc)
5.5
−105
−100
6
5.0
−75
VO = 2VPP
RL = 100Ω
G = +2V/V
−70
4.5
HARMONIC DISTORTION vs OUTPUT VOLTAGE
HARMONIC DISTORTION vs FREQUENCY
−65
4.0
Supply Voltage (±VS)
Resistance (Ω)
−60
VO = 2VPP
RL = 200Ω
G = +2V/V
1
10
Gain (| V/V| )
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
TYPICAL CHARACTERISTICS: VS = ±5V (continued)
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
TWO−TONE, 3RD−ORDER
INTERMODULATION INTERCEPT
INPUT VOLTAGE AND CURRENT NOISE
100
50
PI
10
Voltage Noise (2.5nV/√Hz)
PO
O P A 82 0
5 0Ω
2 00 Ω
Intercept Point (+dBm)
Voltage Noise (nV/√Hz)
Current Noise (pA/√Hz)
45
40
40 2Ω
40 2Ω
35
30
25
20
Current Noise (1.7pA/√Hz)
1
100
1k
10k
100k
1M
15
10M
0
Frequency (Hz)
5
Normalized Gain to Capacitive Load (dB)
RS (Ω)
0dB Peaking Targeted
10
1
100
8
5
CL = 47pF
4
CL = 100pF
3
2
RS
VI
1
50Ω
VO
OPA 820
CL
0
1kΩ(1)
4 02Ω
−1
402Ω
−2
NOTE: (1) 1kΩ is o ptional.
−3
1
1000
10
100
400
Frequency (MHz)
OPEN−LOOP GAIN AND PHASE
80
CMRR
80
70
70
60
Open−Loop Gain (dB)
Common−Mode Rejection Ratio (dB)
Power−Supply Rejection Ratio (dB)
30
CL = 22pF
6
CMRR AND PSRR vs FREQUENCY
60
25
CL = 10pF
7
Capacitive Load (pF)
90
20
FREQUENCY RESPONSE vs CAPACITIVE LOAD
RECOMMENDED RS vs CAPACITIVE LOAD
10
15
Frequency (MHz)
100
1
10
+PSRR
50
40
0
−20
20 log (AOL)
−40
−60
50
−80
40
∠AOL
30
−100
20
−120
20
10
−140
10
0
−160
30
−PSRR
0
1k
10k
100k
1M
Frequency (Hz)
10M
100M
−10
100
1k
10k
100k
1M
Frequency (Hz)
10M
100M
1G
Open−Loop Phase (_)
10
−180
7
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
TYPICAL CHARACTERISTICS: VS = ±5V (continued)
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
OUTPUT VOLTAGE AND CURRENT LIMITATIONS
Output Current
Power Limit
Limit
3
1
Output Impedance (Ω)
RL = 100Ω
2
VO (V)
10
RL = 25Ω
0
RL = 50Ω
−1
−2
−3
Output Current
−4
0.1
1W Internal
Limit
−5
−150
1
Power Limit
−100
0.01
−50
0
50
100
150
1k
10k
100k
I O (mA)
4
Input Right Scale
4
2
2
1
Output Left Scale
0
0
−2
−1
−2
RL = 100Ω
G = +2V/V
See Figure 1
Output Voltage (1V/div)
3
Input Voltage (1V/div)
Output Voltage (2V/div)
6
−6
−3
−8
5
4
4
3
3
Input
Right Scale
2
1
0
0
Output
Left Scale
−1
−2
−3
−5
0.12
0.24
0.10
0.20
0.08
0.16
dP Negative Video
0.12
0.08
0.02
Input Offset Voltage (mV)
0.28
Differential Phase (_)
Differential Gain (%)
0.32
0.04
20
0.5
10
10x Input Offset Current (IOS) Right Scale
0
0
Input Offset Voltage (VOS)
Left Scale
−0.5
−10
Input Bias Current (IB)
Right Scale
0.04
dG Positive Video
2
3
Video Loads
8
1.0
0.36
0.14
1
−4
TYPICAL DC DRIFT OVER TEMPERATURE
dG Negative Video
0
−3
−5
0.40
dP Positive Video
−2
Time (40ns/div)
0.16
0.06
−1
R L = 100Ω
G = −1V/V
See Figure 2
COMPOSITE VIDEO dG/dP
G = +2V/V
2
1
Time (40ns/div)
0.18
100M
5
−4
−4
0.20
10M
INVERTING OVERDRIVE RECOVERY
NONINVERTING OVERDRIVE RECOVERY
8
−4
1M
Frequency (Hz)
Input Voltage (1V/div)
4
CLOSED−LOOP OUTPUT IMPEDANCE vs FREQUENCY
1W Internal
0
4
−1.0
−50
−25
0
25
50
75
Ambient Temperature (_C)
100
−20
125
Input Bias and Offset Current (µV)
5
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
TYPICAL CHARACTERISTICS: VS = ±5V (continued)
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
COMMON−MODE INPUT RANGE AND OUTPUT SWING
vs SUPPLY VOLTAGE
SUPPLY AND OUTPUT CURRENT vs TEMPERATURE
12
5
Left Scale
9
75
6
Supply Current
Right Scale
50
3
Voltage Range (V)
Sink/Source Output Current
100
6
Supply Current (mA)
Output Current (mA)
125
+VIN
4
−VIN
3
+VOUT
2
−VOUT
1
25
−50
−25
0
25
50
75
100
0
125
0
2.5
Ambient Temperature (_ C)
3.5
4.0
5.0
5.5
6.0
TYPICAL INPUT OFFSET VOLTAGE DISTRIBUTION
2500
Mean = −30µV
Standard Deviation = 80µV
Total Count = 6115
Common−Mode Input Impedance
2000
Count
1M
100k
1500
1000
Differential Input Impedance
500
10k
−730
−660
−580
−510
−440
−370
−290
−220
−150
−70
0
70
150
220
290
370
440
510
580
660
730
0
1k
1k
10k
100k
1M
10M
100M
Frequency (Hz)
Input Offset Voltage (µV)
TYPICAL INPUT OFFSET CURRENT DISTRIBUTION
2000
1800
1600
Mean = 26nA
Standard Deviation = 57nA
Total Count = 6115
1400
1200
1000
800
600
400
200
0
−380
−342
−304
−266
−228
−190
−152
−114
−76
−38
0
38
76
114
152
190
228
266
304
342
380
100
Count
Input Impedance (Ω)
4.5
Supply Voltage (±VS )
COMMON−MODE AND DIFFERENTIAL
INPUT IMPEDANCE
10M
3.0
Input Offset Current (nA)
9
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
TYPICAL CHARACTERISTICS: VS = +5V
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
NONINVERTING SMALL−SIGNAL FREQUENCY RESPONSE
3
INVERTING SMALL−SIGNAL FREQUENCY RESPONSE
G = +1
G = +2
−3
Normalized Gain (dB)
G = +5
−6
G = +10
−9
−12
VO = 0.1VPP
RL = 100Ω
See Figure 3
−15
G = −1
0
G = −2
−3
G = −5
−6
G = −10
−9
−12
VO = 0.1VPP
RL = 100Ω
See Figure 4
−15
−18
−18
1M
10M
100M
1G
1
10
Frequency (Hz)
NONINVERTING LARGE−SIGNAL FREQUENCY RESPONSE
9
−3
VO = 2VPP
Gain (dB)
Normalized Gain (dB)
VO = 0.5VPP
0
VO = 1VPP
0
VO = 4VPP
−3
−6
VO = 1VPP
−6
VO = 2VPP
−9
VO = 4VPP
−12
G = +2V/V
RL = 100Ω
See Figure 3
−9
−12
1
G = −1
RL = 100Ω
See Figure 4
−15
−18
10
100
600
1
10
Frequency (MHz)
Small Signal ± 100mV
Left Scale
2.5
2.4
2.5
2.0
2.3
1.5
G = +2
See Figure 3
1.0
2.1
0.5
Time (10ns/div)
10
3.0
Small−Signal Output Voltage (100mV/div)
3.5
2.6
2.2
4.0
Large−Signal Output Voltage (500mV/div)
Small−Signal Output Voltage (100mV/div)
2.7
500
INVERTING PULSE RESPONSE
4.5
Large Signal ± 1V
Right Scale
100
Frequency (MHz)
NONINVERTING PULSE RESPONSE
2.9
2.8
500
INVERTING LARGE−SIGNAL FREQUENCY RESPONSE
3
VO = 0.5VPP
6
3
100
Frequency (MHz)
2.9
2.8
4.5
G = −1
See Figure 4
4.0
2.7
3.5
2.6
2.5
3.0
Small Signal ± 100mV
Left Scale
2.4
2.3
2.2
2.5
2.0
Large Signal ± 1V
Right Scale
2.1
1.5
1.0
0.5
Time (10ns/div)
Large−Signal Output Voltage (500mV/div)
Normalized Gain (dB)
0
3
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
TYPICAL CHARACTERISTICS: VS = +5V (continued)
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
HARMONIC DISTORTION vs FREQUENCY
HARMONIC DISTORTION vs LOAD RESISTANCE
f = 1MHz
VO = 2VPP
G = +2V/V
2nd−Harmonic
−80
−60
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
−75
−85
−90
−95
3rd−Harmonic
−100
G = +2V/V
R L = 200Ω
VO = 2VPP
−70
−80
−90
3rd−Harmonic
−100
See Figure 3
−105
100
2nd−Harmonic
See Figure 3
−110
1k
0.1
1
HARMONIC DISTORTION vs OUTPUT VOLTAGE
VO = 2VPP
f = 1MHz
G = +2V/V
RL = 200Ω
−80
HARMONIC DISTORTION vs NONINVERTING GAIN
−60
2nd−Harmonic
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
−70
10
Frequency (MHz)
Resistance (Ω)
−90
3rd−Harmonic
−100
f = 1MHz
RL = 200Ω
VO = 2VPP
−70
2nd−Harmonic
−80
−90
3rd−Harmonic
−100
See Figure 3
See Figure 3
−110
0.1
1
−110
10
1
10
Output Voltage Swing (VPP)
Gain (V/V)
TWO−TONE, 3RD−ORDER
INTERMODULATION INTERCEPT
HARMONIC DISTORTION vs INVERTING GAIN
40
f = 1MHz
RL = 200Ω
VO = 2VPP
−75
+5V
806Ω
0.01µF
2nd−Harmonic
Intercept Point (+dBm)
Harmonic Distortion (dBc)
−70
−80
−85
3rd−Harmonic
−90
−95
PI
35
806Ω
57.6Ω
PO
OPA820
200Ω
402Ω
402Ω
30
0.01µF
25
20
See Figure 4
−100
1
10
Gain (| V/V| )
15
0
5
10
15
20
25
30
Frequency (MHz)
11
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
TYPICAL CHARACTERISTICS: VS = +5V (continued)
RF = 402Ω, RL = 100Ω, and G = +2, unless otherwise noted.
FREQUENCY RESPONSE vs CAPACITIVE LOAD
RECOMMENDED RS vs CAPACITIVE LOAD
Normalized Gain to Capacitive Load (dB)
100
10
1
1
10
100
CL = 10pF
7
6
5
CL = 22pF
4
CL = 47pF
3
CL = 100pF
2
+5V
0.01µF
1
806Ω
RS
VI
57.6Ω
0
806Ω
CL
−1
402Ω
−2
1
10
SUPPLY AND OUTPUT CURRENT vs TEMPERATURE
5
0
Input Offset Voltage (VOS)
Left Scale
−0.5
−5
−1.0
−10
Input Bias Current (IB)
Right Scale
25
50
75
100
Output Current (mA)
10x Input Offset Current (IOS)
Right Scale
Input Bias and Offset Current (µV)
Input Offset Voltage (mV)
10
1.0
0
−15
125
12
100
9
Source Output Current
Sink Output Current
75
50
3
25
−50
−25
0
25
50
75
100
0
125
Ambient Temperature (_ C)
TYPICAL INPUT OFFSET CURRENT DISTRIBUTION
TYPICAL INPUT OFFSET VOLTAGE DISTRIBUTION
3500
2000
Mean = −490µV
Standard Deviation = 90µV
Total Count = 6115
1800
1600
2500
1400
2000
1200
Count
Count
6
Supply Current
Ambient Temperature (_C)
3000
300
125
15
−25
100
Frequency (MHz)
TYPICAL DC DRIFT OVER TEMPERATURE
−1.5
−50
NOTE: (1) 1kΩis optional.
0.01µF
−3
1000
1.5
0
1kΩ(1)
402Ω
Capacitive Load (pF)
0.5
VO
OPA820
1500
Mean = 43nA
Standard Deviation = 50nA
Total Count = 6115
1000
800
600
1000
400
500
200
0
12
−1.08
−0.97
−0.86
−0.76
−0.65
−0.54
−0.43
−0.32
−0.22
−0.11
0
0.11
0.22
0.32
0.43
0.54
0.65
0.76
0.86
0.97
1.08
−380
−342
−304
−266
−228
−190
−152
−114
−76
−38
0
38
76
114
152
190
228
266
304
342
380
0
Input Offset Voltage (mV)
Input Offset Current (nA)
Supply Current (mA)
RS (Ω)
0dB Peaking Targeted
8
"#$
www.ti.com
SBOS303A − JUNE 2004 − REVISED JULY 2004
APPLICATIONS INFORMATION
+5V
WIDEBAND VOLTAGE-FEEDBACK
OPERATION
0.1µF
RT
205Ω
0.01µF
50Ω Source
+5V
+VS
+
0.1µF
2.2µF
50Ω Source
VIN
RS 50Ω Load
50Ω
VO
50Ω
OPA820
RF
402Ω
RG
402Ω
0.1µF
2.2µF
+
−VS
−5V
Figure 1. Gain of +2, High-Frequency Application
and Characterization Circuit
WIDEBAND INVERTING OPERATION
Operating the OPA820 as an inverting amplifier has several
benefits and is particularly useful when a matched 50Ω source
and input impedance is required. Figure 2 shows the inverting
gain of −1 circuit used as the basis of the inverting mode
typical characteristics.
50Ω
VO
50Ω Load
OPA820
RG
402Ω
RF
402Ω
VI
RM
57.6Ω
0.1µF
Figure 1 shows the gain of +2 configuration used as the basis
for most of the typical characteristics. Most of the curves were
characterized using signal sources with 50Ω driving
impedance and with measurement equipment presenting
50Ω load impedance. In Figure 1, the 50Ω shunt resistor at the
VI terminal matches the source impedance of the test
generator while the 50Ω series resistor at the VO terminal
provides a matching resistor for the measurement equipment
load. Generally, data sheet specifications refer to the voltage
swings at the output pin (VO in Figure 1). The 100Ω load,
combined with the 804Ω total feedback network load,
presents the OPA820 with an effective load of approximately
90Ω in Figure 1.
2.2µF
+
Proper PC board layout and careful component selection will
maximize the performance of the OPA820 in all applications,
as discussed in the following sections of this data sheet.
+
The combination of speed and dynamic range offered by the
OPA820 is easily achieved in a wide variety of application
circuits, providing that simple principles of good design
practice are observed. For example, good power-supply
decoupling, as shown in Figure 1, is essential to achieve the
lowest possible harmonic distortion and smooth frequency
response.
2.2µF
−5V
Figure 2. Inverting G = −1 Specifications and Test
Circuit
In the inverting case, just the feedback resistor appears as
part of the total output load in parallel with the actual load. For
the 100Ω load used in the typical characteristics, this gives a
total load of 80Ω in this inverting configuration. The gain
resistor is set to get the desired gain (in this case 402Ω for a
gain of −1) while an additional input matching resistor (RM) can
be used to set the total input impedance equal to the source
if desired. In this case, RM = 57.6Ω in parallel with the 402Ω
gain setting resistor gives a matched input impedance of 50Ω.
This matching is only needed when the input needs to be
matched to a source impedance, as in the characterization
testing done using the circuit of Figure 2.
The OPA820 offers extremely good DC accuracy as well as
low noise and distortion. To take full advantage of that DC
precision, the total DC impedance looking out of each of the
input nodes must be matched to get bias current cancellation.
For the circuit of Figure 2, this requires the 205Ω resistor
shown to ground on the noninverting input. The calculation for
this resistor includes a DC-coupled 50Ω source impedance
along with RG and RM. Although this resistor will provide
cancellation for the bias current, it must be well decoupled
(0.01µF in Figure 2) to filter the noise contribution of the
resistor and the input current noise.
As the required RG resistor approaches 50Ω at higher gains,
the bandwidth for the circuit in Figure 2 will far exceed the
bandwidth at that same gain magnitude for the noninverting
circuit of Figure 1. This occurs due to the lower noise gain for
the circuit of Figure 2 when the 50Ω source impedance is
included in the analysis. For instance, at a signal gain of −10
(RG = 50Ω, RM = open, RF = 499Ω) the noise gain for the
circuit of Figure 2 will be 1 + 499Ω/(50Ω + 50Ω) = 6 as a result
of adding the 50Ω source in the noise gain equation. This
gives considerable higher bandwidth than the noninverting
gain of +10. Using the 240MHz gain bandwidth product for the
OPA820, an inverting gain of −10 from a 50Ω source to a 50Ω
RG gives 55MHz bandwidth, whereas the noninverting gain of
+10 gives 30MHz.
13
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
WIDEBAND SINGLE-SUPPLY OPERATION
Figure 4 shows the AC-coupled, single +5V supply, gain of
−1V/V circuit configuration used as a basis for the +5V only
Typical Characteristic curves. In this case, the midpoint DC
bias on the noninverting input is also decoupled with an
additional 0.01µF decoupling capacitor. This reduces the
source impedance at higher frequencies for the noninverting
input bias current noise. This 2.5V bias on the noninverting
input pin appears on the inverting input pin and, since RG is DC
blocked by the input capacitor, will also appear at the output
pin.
Figure 3 shows the AC-coupled, single +5V supply, gain of
+2V/V circuit configuration used as a basis for the +5V only
Electrical and Typical Characteristics. The key requirement for
single-supply operation is to maintain input and output signal
swings within the useable voltage ranges at both the input and
the output. The circuit of Figure 3 establishes an input
midpoint bias using a simple resistive divider from the +5V
supply (two 806Ω resistors) to the noninverting input. The
input signal is then AC-coupled into this midpoint voltage bias.
The input voltage can swing to within 0.9V of the negative
supply and 0.5V of the positive supply, giving a 3.6VPP input
signal range. The input impedance matching resistor (57.6Ω)
used in Figure 3 is adjusted to give a 50Ω input match when
the parallel combination of the biasing divider network is
included. The gain resistor (RG) is AC-coupled, giving the
circuit a DC gain of +1. This puts the input DC bias voltage
(2.5V) on the output as well. On a single +5V supply, the output
voltage can swing to within 1.3V of either supply pin while
delivering more than 80mA output current giving 2.4V output
swing into 100Ω (5.6dBm maximum at the matched load).
The single-supply test circuits of Figure 3 and Figure 4 show
+5V operation. These same circuits can be used over a singlesupply range of +5V to +12V. Operating on a single +12V
supply, with the Absolute Maximum Supply voltage
specification of +13V, gives adequate design margin for the
typical ±5% supply tolerance.
+5V
+VS
+
0.1µF
50Ω Source
0.01µF
6.8µF
806Ω
DIS
VI
57.6Ω
VO
OPA820
806Ω
100Ω
VS/2
RF
402Ω
RG
402Ω
0.01µF
Figure 3. AC-Coupled, G = +2V/V, Single-Supply Specifications and Test Circuit
+5V
+VS
+
0.1µF
6.8µF
806Ω
DIS
0.01µF
806Ω
RG
0.01µF 402Ω
OPA820
VO
100Ω
VS/2
RF
402Ω
VI
Figure 4. AC-Coupled, G = −1V/V, Single-Supply Specifications and Test Circuit
14
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
BUFFERING HIGH-PERFORMANCE ADCs
To achieve full performance from a high dynamic range ADC,
considerable care must be exercised in the design of the input
amplifier interface circuit. The example circuit on the front
page shows a typical AC-coupled interface to a very high
dynamic range converter. This AC-coupled example allows
the OPA820 to be operated using a signal range that swings
symmetrically around ground (0V). The 2VPP swing is then
level-shifted through the blocking capacitor to a midscale
reference level, which is created by a well-decoupled resistive
divider off the converter’s internal reference voltages. To have
a negligible effect (1dB) on the rated spurious-free dynamic
range (SFDR) of the converter, the amplifier’s SFDR should be
at least 18dB greater than the converter. The OPA820 has
minimal effect on the rated distortion of the ADS850, given its
79dB SFDR at 2VPP, 1MHz. The > 90dB (< 1MHz) SFDR for
the OPA820 in this configuration implies a < 3dB degradation
(for the system) from the converter’s specification. For further
SFDR improvement with the OPA820, a differential
configuration is suggested.
Successful application of the OPA820 for ADC driving
requires careful selection of the series resistor at the amplifier
output, along with the additional shunt capacitor at the ADC
input. To some extent, selection of this RC network will be
determined empirically for each converter. Many highperformance CMOS ADCs, such as the ADS850, perform
better with the shunt capacitor at the input pin. This capacitor
provides low source impedance for the transient currents
produced by the sampling process. Improved SFDR is often
obtained by adding this external capacitor, whose value is
often recommended in this converter data sheet. The external
capacitor, in combination with the built-in capacitance of the
ADC input, presents a significant capacitive load to the
OPA820. Without a series isolation resistor, an undesirable
peaking or loss of stability in the amplifier may result.
335Ω
Since the DC bias current of the CMOS ADC input is
negligible, the resistor has no effect on overall gain or offset
accuracy. Refer to the typical characteristic RS vs Capacitive
Load to obtain a good starting value for the series resistor. This
will ensure flat frequency response to the ADC input.
Increasing the external capacitor value will allow the series
resistor to be reduced. Intentionally bandlimiting using this RC
network can also be used to limit noise at the converter input.
VIDEO LINE DRIVING
Most video distribution systems are designed with 75Ω series
resistors to drive a matched 75Ω cable. In order to deliver a net
gain of 1 to the 75Ω matched load, the amplifier is typically set
up for a voltage gain of +2, compensating for the 6dB
attenuation of the voltage divider formed by the series and
shunt 75Ω resistors at either end of the cable.
The circuit of Figure 1 applies to this requirement if all
references to 50Ω resistors are replaced by 75Ω values.
Often, the amplifier gain is further increased to 2.2, which
recovers the additional DC loss of a typical long cable run. This
change would require the gain resistor (RG) in Figure 1 to be
reduced from 402Ω to 335Ω. In either case, both the gain
flatness and the differential gain/phase performance of the
OPA820 will provide exceptional results in video distribution
applications. Differential gain and phase measure the change
in overall small-signal gain and phase for the color sub-carrier
frequency (3.58MHz in NTSC systems) versus changes in the
large-signal output level (which represents luminance
information in a composite video signal). The OPA820, with
the typical 150Ω load of a single matched video cable, shows
less than 0.01%/0.01° differential gain/phase errors over the
standard luminance range for a positive video (negative sync)
signal. Similar performance would be observed for multiple
video signals, as shown in Figure 5.
402Ω
75Ω Transmission Line
75Ω
VOUT
OPA820
Video
Input
75Ω
75Ω
75Ω
VOUT
75Ω
75Ω
VOUT
High output current drive capability allows three
back−terminated 75Ωtransmission lines to be simultaneously driven.
75Ω
Figure 5. Video Distribution Amplifier
15
"#$
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SBOS303A − JUNE 2004 − REVISED JULY 2004
SINGLE OP AMP DIFFERENTIAL AMPLIFIER
The voltage-feedback architecture of the OPA820, with its
high common-mode rejection ratio (CMRR), will provide
exceptional performance in differential amplifier configurations. Figure 6 shows a typical configuration. The starting
point for this design is the selection of the RF value in the range
of 200Ω to 2kΩ. Lower values reduce the required RG,
increasing the load on the V2 source and on the OPA820
output. Higher values increase output noise as well as the
effects of parasitic board and device capacitances. Following
the selection of RF, RG must be set to achieve the desired
inverting gain for V2. Remember that the bandwidth will be set
approximately by the gain bandwidth product (GBP) divided
by the noise gain (1 + RF/RG). For accurate differential
operation (that is, good CMRR), the ratio R2/R1 must be set
equal to RF/RG.
This approach saves board space, cost, and power compared
to using two additional OPA820 devices, and still achieves
very good noise and distortion performance as a result of the
moderate loading on the input amplifiers.
+5V
V1
OPA2822
R F1
500Ω
RG
500Ω
Power−supply decoupling not shown.
+5V
500Ω
OPA820
R F1
500Ω
500Ω
VO
−5V
500Ω
500Ω
+5V
OPA2822
Power−supply decoupling not shown.
R1
V1
50Ω
R2
OPA820
RG
RF
V2
VO =
when
RF
(V − V2)
RG 1
R2 RF
=
R1 RG
−5V
Figure 6. High-Speed, Single Differential
Amplifier
Usually, it is best to set the absolute values of R2 and R1 equal
to RF and RG, respectively; this equalizes the divider
resistances and cancels the effect of input bias currents.
However, it is sometimes useful to scale the values of R2 and
R1 in order to adjust the loading on the driving source, V1. In
most cases, the achievable low-frequency CMRR will be
limited by the accuracy of the resistor values. The 85dB
CMRR of the OPA820 itself will not determine the overall circuit
CMRR unless the resistor ratios are matched to better than
0.003%. If it is necessary to trim the CMRR, then R2 is the
suggested adjustment point.
THREE OP AMP DIFFERENCING
(Instrumentation Topology)
The primary drawback of the single op amp differential
amplifier is its relatively low input impedances. Where high
impedance is required at the differential input, a standard
instrumentation amplifier (INA) topology may be built using the
OPA820 as the differencing stage. Figure 7 shows an
example of this, in which the two input amplifiers are packaged
together as a dual voltage-feedback op amp, the OPA2822.
16
V2
− 5V
Figure 7. Wideband 3-Op Amp Differencing
Amplifier
In this circuit, the common-mode gain to the output is always
1, because of the four matched 500Ω resistors, whereas the
differential gain is set by (1 + 2RF1/RG), which is equal to 2
using the values in Figure 7. The differential to single-ended
conversion is still performed by the OPA820 output stage. The
high-impedance inputs allow the V1 and V2 sources to be
terminated or impedance-matched as required. If the V1 and
V2 inputs are already truly differential, such as the output from
a signal transformer, then a single matching termination
resistor may be used between them. Remember, however,
that a defined DC signal path must always exist for the V1 and
V2 inputs; for the transformer case, a center-tapped secondary connected to ground would provide an optimum DC
operating point.
DAC TRANSIMPEDANCE AMPLIFIER
High-frequency Digital-to-Analog Converters (DACs) require
a low-distortion output amplifier to retain their SFDR
performance into real-world loads. See Figure 8 for a
single-ended output drive implementation. In this circuit, only
one side of the complementary output drive signal is used. The
diagram shows the signal output current connected into the
virtual ground-summing junction of the OPA820, which is set
up as a transimpedance stage or I-V converter. The unused
current output of the DAC is connected to ground. If the DAC
requires its outputs to be terminated to a compliance voltage
other than ground for operation, then the appropriate voltage
level may be applied to the noninverting input of the OPA820.
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SBOS303A − JUNE 2004 − REVISED JULY 2004
C1
150pF
VO = ID RF
OPA820
+5V
High−Speed
DAC
R1
124Ω
RF
R2
505Ω
V1
C2
100pF
CF
CD
ID
VO
OPA820
RF
402Ω
GBP →Gain Bandwidth
Product (Hz) for the OPA820.
Power−supply
decoupling not shown.
−5V
RG
402Ω
ID
Figure 9. 5MHz Butterworth Low-Pass Active
Filter
Figure 8. Wideband, Low-Distortion DAC
Transimpedance Amplifier
Another type of filter, a high-Q bandpass filter, is shown in
Figure 10. The transfer function for this filter is:
The DC gain for this circuit is equal to RF. At high frequencies,
the DAC output capacitance (CD) will produce a zero in the
noise gain for the OPA820 that may cause peaking in the
closed-loop frequency response. CF is added across RF to
compensate for this noise-gain peaking. To achieve a flat
transimpedance frequency response, this pole in the
feedback network should be set to:
1
+
2pR FCF
GBP
Ǹ4pR
C
F
D
GBP
Ǹ2pR
C
F
(3)
R3
R 2R 4R 5C 1C 2
(4)
1 1
with
w O2 +
and
wO
+ 1
Q
R 1C 1
(1)
which will give a corner frequency f−3dB of approximately:
f *3dB +
R )R
s R 3R C4
V OUT
1 4 1
+
1
V IN
s2 ) s R C ) R
(2)
ACTIVE FILTERS
Most active filter topologies will have exceptional performance
using the broad bandwidth and unity-gain stability of the
OPA820. Topologies employing capacitive feedback require
a unity-gain stable, voltage-feedback op amp. Sallen-Key
filters simply use the op amp as a noninverting gain stage
inside an RC network. Either current- or voltage-feedback op
amps may be used in Sallen-Key implementations.
Figure 9 shows an example Sallen-Key low-pass filter, in
which the OPA820 is set up to deliver a low-frequency gain of
+2. The filter component values have been selected to
achieve a maximally-flat Butterworth response with a 5MHz,
−3dB bandwidth. The resistor values have been slightly
adjusted to compensate for the effects of the 240MHz
bandwidth provided by the OPA820 in this configuration. This
filter may be combined with the ADC driver suggestions to
provide moderate (2-pole) Nyquist filtering, limiting noise, and
out-of-band harmonics into the input of an ADC. This filter will
deliver the exceptionally low harmonic distortion required by
high SFDR ADCs such as the ADS850 (14-bit, 10MSPS,
82dB SFDR).
(5)
For the values chosen in Figure 10:
fO +
D
R3
R
2 4R 5C 1C 2
and
wO
] 1MHz
2p
(6)
Q = 100
See Figure 11 for the frequency response of the filter
shown in Figure 10.
R3
500Ω
OPA820
C2
1000pF
R1
15.8kΩ
R2
158Ω
R4
500Ω
R5
158Ω
OPA820
VOUT
VIN
C1
1000pF
Figure 10. High-Q 1MHz Bandpass Filter
17
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SBOS303A − JUNE 2004 − REVISED JULY 2004
Gain (dB)
OPERATING SUGGESTIONS
OPTIMIZING RESISTOR VALUES
6
0
−6
−12
−18
−24
−30
−36
−42
−48
−54
−60
−66
−72
100k
1M
10M
100M
Frequency (Hz)
Figure 11. High-Q 1MHz Bandpass Filter
Frequency Response
DESIGN-IN TOOLS
DEMONSTRATION BOARDS
Two PC boards are available to assist in the initial evaluation
of circuit performance using the OPA820 in its two package
styles. Both of these are available, free, as an unpopulated PC
board delivered with descriptive documentation. The
summary information for these boards is shown in the table
below.
LITERATURE
REQUEST
NUMBER
PRODUCT
PACKAGE
BOARD PART
NUMBER
OPA820ID
SO-8
DEM-OPA68xU
SBOU010
OPA820IDBV
SOT23-5
DEM-OPA6xxN
SBOU009
Go to the TI web site (www.ti.com) to request evaluation
boards in the OPA820 product folder.
MACROMODELS AND APPLICATIONS
SUPPORT
Computer simulation of circuit performance using SPICE is
often a quick way to analyze the performance of the OPA820
and its circuit designs. This is particularly true for video and RF
amplifier circuits where parasitic capacitance and inductance
can play a major role on circuit performance. A SPICE model
for the OPA820 is available through the TI web page
(www.ti.com). The applications department is also available
for design assistance. These models predict typical
small-signal AC, transient steps, DC performance, and noise
under a wide variety of operating conditions. The models
include the noise terms found in the electrical specifications of
the data sheet. These models do not attempt to distinguish
between the package types in their small-signal AC
performance.
18
Since the OPA820 is a unity-gain stable, voltage-feedback op
amp, a wide range of resistor values may be used for the
feedback and gain-setting resistors. The primary limits on
these values are set by dynamic range (noise and distortion)
and parasitic capacitance considerations. Usually, the feedback resistor value should be between 200Ω and 1kΩ. Below
200Ω, the feedback network will present additional output
loading which can degrade the harmonic distortion performance of the OPA820. Above 1kΩ, the typical parasitic
capacitance (approximately 0.2pF) across the feedback
resistor may cause unintentional band limiting in the amplifier
response. A direct short is suggested as a feedback for
AV = +1V/V.
A good rule of thumb is to target the parallel combination of RF
and RG (see Figure 1) to be less than about 200Ω. The
combined impedance RF || RG interacts with the inverting input
capacitance, placing an additional pole in the feedback
network, and thus a zero in the forward response. Assuming
a 2pF total parasitic on the inverting node, holding RF || RG <
200Ω will keep this pole above 400MHz. By itself, this
constraint implies that the feedback resistor RF can increase
to several kΩ at high gains. This is acceptable as long as the
pole formed by RF and any parasitic capacitance appearing in
parallel is kept out of the frequency range of interest.
In the inverting configuration, an additional design
consideration must be noted. RG becomes the input resistor
and therefore the load impedance to the driving source. If
impedance matching is desired, RG may be set equal to the
required termination value. However, at low inverting gains,
the resulting feedback resistor value can present a significant
load to the amplifier output. For example, an inverting gain of
2 with a 50Ω input matching resistor (= RG) would require a
100Ω feedback resistor, which would contribute to output
loading in parallel with the external load. In such a case, it
would be preferable to increase both the RF and RG values,
and then achieve the input matching impedance with a third
resistor to ground (see Figure 2). The total input impedance
becomes the parallel combination of RG and the additional
shunt resistor.
BANDWIDTH vs GAIN
Voltage-feedback op amps exhibit decreasing closed-loop
bandwidth as the signal gain is increased. In theory, this
relationship is described by the GBP shown in the
specifications. Ideally, dividing GBP by the noninverting signal
gain (also called the noise gain, or NG) will predict the
closed-loop bandwidth. In practice, this only holds true when
the phase margin approaches 90°, as it does in high-gain
configurations. At low signal gains, most amplifiers will exhibit
a more complex response with lower phase margin. The
OPA820 is optimized to give a maximally-flat, 2nd-order
Butterworth response in a gain of 2. In this configuration, the
OPA820 has approximately 64° of phase margin and will show
a typical −3dB bandwidth of 240MHz. When the phase margin
is 64°, the closed-loop bandwidth is approximately √2 greater
than the value predicted by dividing GBP by the noise gain.
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Increasing the gain will cause the phase margin to approach
90° and the bandwidth to more closely approach the predicted
value of (GBP/NG). At a gain of +10, the 30MHz bandwidth
shown in the Electrical Characteristics agrees with that
predicted using the simple formula and the typical GBP of
280MHz.
OUTPUT DRIVE CAPABILITY
The OPA820 has been optimized to drive the demanding load
of a doubly-terminated transmission line. When a 50Ω line is
driven, a series 50Ω into the cable and a terminating 50Ω load
at the end of the cable are used. Under these conditions, the
cable impedance will appear resistive over a wide frequency
range, and the total effective load on the OPA820 is 100Ω in
parallel with the resistance of the feedback network. The
electrical characteristics show a ±3.6V swing into this
load—which will then be reduced to a ±1.8V swing at the
termination resistor. The ±75mA output drive over temperature provides adequate current drive margin for this load.
Higher voltage swings (and lower distortion) are achievable
when driving higher impedance loads.
A single video load typically appears as a 150Ω load (using
standard 75Ω cables) to the driving amplifier. The OPA820
provides adequate voltage and current drive to support up to
three parallel video loads (50Ω total load) for an NTSC signal.
With only one load, the OPA820 achieves an exceptionally low
0.01%/0.03° dG/dP error.
DRIVING CAPACITIVE LOADS
One of the most demanding, and yet very common, load
conditions for an op amp is capacitive loading. A high-speed,
high open-loop gain amplifier like the OPA820 can be very
susceptible to decreased stability and closed-loop response
peaking when a capacitive load is placed directly on the output
pin. In simple terms, the capacitive load reacts with the
open-loop output resistance of the amplifier to introduce an
additional pole into the loop and thereby decrease the phase
margin. This issue has become a popular topic of application
notes and articles, and several external solutions to this
problem have been suggested. When the primary
considerations are frequency response flatness, pulse
response fidelity, and/or distortion, the simplest and most
effective solution is to isolate the capacitive load from the
feedback loop by inserting a series isolation resistor between
the amplifier output and the capacitive load. This does not
eliminate the pole from the loop response, but rather shifts it
and adds a zero at a higher frequency. The additional zero
acts to cancel the phase lag from the capacitive load pole, thus
increasing the phase margin and improving stability.
The Typical Characteristics show the recommended RS vs
Capacitive Load and the resulting frequency response at the
load. The criterion for setting the recommended resistor is
maximum bandwidth, flat frequency response at the load.
Since there is now a passive low-pass filter between the
output pin and the load capacitance, the response at the
output pin itself is typically somewhat peaked, and becomes
flat after the roll-off action of the RC network. This is not a
concern in most applications, but can cause clipping if the
desired signal swing at the load is very close to the amplifier’s
swing limit. Such clipping would be most likely to occur in pulse
response applications where the frequency peaking is
manifested as an overshoot in the step response.
Parasitic capacitive loads greater than 2pF can begin to
degrade the performance of the OPA820. Long PC board
traces, unmatched cables, and connections to multiple
devices can easily cause this value to be exceeded. Always
consider this effect carefully, and add the recommended
series resistor as close as possible to the OPA820 output pin
(see the Board Layout section).
DISTORTION PERFORMANCE
The OPA820 is capable of delivering an exceptionally low
distortion signal at high frequencies and low gains. The
distortion plots in the Typical Characteristics show the typical
distortion under a wide variety of conditions. Most of these
plots are limited to 100dB dynamic range. The OPA820
distortion does not rise above −90dBc until either the signal
level exceeds 0.9V and/or the fundamental frequency exceeds 500kHz. Distortion in the audio band is ≤ −100dBc.
Generally, until the fundamental signal reaches very high
frequencies or powers, the 2nd-harmonic will dominate the
distortion with a negligible 3rd-harmonic component.
Focusing then on the 2nd-harmonic, increasing the load
impedance improves distortion directly. Remember that the
total load includes the feedback network—in the noninverting
configuration this is the sum of RF + RG, whereas in the
inverting configuration this is just RF (see Figure 1). Increasing
the output voltage swing increases harmonic distortion
directly. Increasing the signal gain will also increase the
2nd-harmonic distortion. Again, a 6dB increase in gain will
increase the 2nd- and 3rd-harmonic by 6dB even with a
constant output power and frequency. Finally, the distortion
increases as the fundamental frequency increases because
of the roll-off in the loop gain with frequency. Conversely, the
distortion will improve going to lower frequencies down to the
dominant open-loop pole at approximately 100kHz. Starting
from the −85dBc 2nd-harmonic for 2VPP into 200Ω, G = +2
distortion at 1MHz (from the Typical Characteristics), the
2nd-harmonic distortion will not show any improvement below
100kHz and will then be:
−100dB − 20log (1MHz/100kHz) = −105dBc
19
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NOISE PERFORMANCE
The OPA820 complements its low harmonic distortion with low
input noise terms. Both the input-referred voltage noise and
the two input-referred current noise terms combine to give a
low output noise under a wide variety of operating conditions.
Figure 12 shows the op amp noise analysis model with all the
noise terms included. In this model, all the noise terms are
taken to be noise voltage or current density terms in either
nV/√Hz or pA/√Hz.
ENI
EO
OPA820
RS
IBN
(9µA typ into the pins) but with a very close match between the
two input currents—typically 100nA input offset current. The
total output offset voltage may be considerably reduced by
matching the source impedances looking out of the two inputs.
For example, one way to add bias current cancellation to the
circuit of Figure 1 would be to insert a 175Ω series resistor into
the noninverting input from the 50Ω terminating resistor. When
the 50Ω source resistor is DC-coupled, this will increase the
source impedance for the noninverting input bias current to
200Ω. Since this is now equal to the impedance looking out of
the inverting input (RF || RG), the circuit will cancel the gains for
the bias currents to the output leaving only the offset current
times the feedback resistor as a residual DC error term at the
output. Using a 402Ω feedback resistor, this output error will
now be less than ±0.4µA × 402Ω = ±160µV at 25°C.
THERMAL ANALYSIS
The OPA820 will not require heatsinking or airflow in most
applications. Maximum desired junction temperature would
set the maximum allowed internal power dissipation as
described below. In no case should the maximum junction
temperature be allowed to exceed +150°C.
ERS
RF
√4kTRS
4kT
RG
√4kTRF
I BI
RG
4kT = 1.6E − 20J
at 290_ K
Figure 12. Op Amp Noise Analysis Model
The total output spot noise voltage is computed as the square
root of the squared contributing terms to the output noise
voltage. This computation is adding all the contributing noise
powers at the output by superposition, then taking the square
root to get back to a spot noise voltage. Equation 3 shows the
general form for this output noise voltage using the terms
presented in Figure 12.
EO +
Ǹƪ
ƫ
Note that it is the power in the output stage and not in the load
that determines internal power dissipation.
E2NI ) ǒI BNR SǓ ) 4kTR S NG 2 ) ǒI BIR FǓ ) 4kTR FNG
2
2
(7)
Dividing this expression by the noise gain (NG = 1 + RF/RG)
will give the equivalent input referred spot noise voltage at the
noninverting input, as shown in Equation 4.
EN +
Ǹ
E2NI ) ǒIBNRSǓ ) 4kTR S )
2
ǒ Ǔ
IBIRF
NG
As a worst-case example, compute the maximum TJ using an
OPA820IDBV (SOT23-5 package) in the circuit of Figure 1
operating at the maximum specified ambient temperature of
+85°C.
PD = 10V(6.4mA) + 52/(4 × (100Ω || 800Ω)) = 134mW
2
)
4kTR F
NG
Maximum TJ = +85°C + (134mW × 150°C/W) = 105°C
(8)
Evaluating these two equations for the OPA820 circuit
presented in Figure 1 will give a total output spot noise voltage
of 6.44nV/√Hz and an equivalent input spot noise voltage of
3.22nV/√Hz.
DC OFFSET CONTROL
The OPA820 can provide excellent DC signal accuracy
because of its high open-loop gain, high common-mode
rejection, high power-supply rejection, and low input offset
voltage and bias current offset errors. To take full advantage
of this low input offset voltage, careful attention to input bias
current cancellation is also required. The high-speed input
stage for the OPA820 has a moderately high input bias current
20
Operating junction temperature (TJ) is given by
TA + PD × qJA. The total internal power dissipation (PD) is the
sum of quiescent power (PDQ) and additional power
dissipated in the output stage (PDL) to deliver load power.
Quiescent power is simply the specified no-load supply
current times the total supply voltage across the part. PDL will
depend on the required output signal and load but would, for
a grounded resistive load, be at a maximum when the output
is fixed at a voltage equal to 1/2 of either supply voltage (for
equal bipolar supplies). Under this worst-case condition,
PDL = VS2/(4 × RL), where RL includes feedback network
loading.
BOARD LAYOUT
Achieving optimum performance with a high-frequency
amplifier such as the OPA820 requires careful attention to
board layout parasitics and external component types.
Recommendations that will optimize performance include:
a) Minimize parasitic capacitance to any AC ground for all
of the signal I/O pins. Parasitic capacitance on the output
and inverting input pins can cause instability: on the
noninverting input, it can react with the source impedance to
cause unintentional bandlimiting. To reduce unwanted
capacitance, a window around the signal I/O pins should be
opened in all of the ground and power planes around those
pins. Otherwise, ground and power planes should be
unbroken elsewhere on the board.
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b) Minimize the distance (< 0.25”) from the power-supply
pins to high-frequency 0.1µF decoupling capacitors. At
the device pins, the ground and power-plane layout should not
be in close proximity to the signal I/O pins. Avoid narrow power
and ground traces to minimize inductance between the pins
and the decoupling capacitors. The power-supply connections should always be decoupled with these capacitors.
Larger (2.2µF to 6.8µF) decoupling capacitors, effective at
lower frequency, should also be used on the main supply pins.
These may be placed somewhat farther from the device and
may be shared among several devices in the same area of the
PC board.
c) Careful selection and placement of external components will preserve the high-frequency performance of
the OPA820. Resistors should be a very low reactance type.
Surface-mount resistors work best and allow a tighter overall
layout. Metal-film and carbon composition, axially leaded
resistors can also provide good high-frequency performance.
Again, keep their leads and PC board trace length as short as
possible. Never use wire-wound type resistors in a
high-frequency application. Since the output pin and inverting
input pin are the most sensitive to parasitic capacitance,
always position the feedback and series output resistor, if any,
as close as possible to the output pin. Other network
components, such as noninverting input termination resistors,
should also be placed close to the package. Where
double-side component mounting is allowed, place the
feedback resistor directly under the package on the other side
of the board between the output and inverting input pins. Even
with a low parasitic capacitance shunting the external
resistors, excessively high resistor values can create
significant time constants that can degrade performance.
Good axial metal-film or surface-mount resistors have
approximately 0.2pF in shunt with the resistor. For resistor
values > 1.5kΩ, this parasitic capacitance can add a pole
and/or a zero below 500MHz that can effect circuit operation.
Keep resistor values as low as possible consistent with
load-driving considerations. It has been suggested here that
a good starting point for design would be to set RG || RF =
200Ω. Using this setting will automatically keep the resistor
noise terms low, and minimize the effect of their parasitic
capacitance.
d) Connections to other wideband devices on the board
may be made with short direct traces or through onboard
transmission lines. For short connections, consider the trace
and the input to the next device as a lumped capacitive load.
Relatively wide traces (50mils to 100mils) should be used,
preferably with ground and power planes opened up around
them. Estimate the total capacitive load and set RS from the
plot of Recommended RS vs Capacitive Load. Low parasitic
capacitive loads (< 5pF) may not need an RS since the
OPA820 is nominally compensated to operate with a 2pF
parasitic load. Higher parasitic capacitive loads without an RS
are allowed as the signal gain increases (increasing the
unloaded phase margin). If a long trace is required, and the
6dB signal loss intrinsic to a doubly-terminated transmission
line is acceptable, implement a matched impedance
transmission line using microstrip or stripline techniques
(consult an ECL design handbook for microstrip and stripline
layout techniques). A 50Ω environment is normally not
necessary onboard, and in fact, a higher impedance
environment will improve distortion as shown in the distortion
versus load plots. With a characteristic board trace impedance
defined based on board material and trace dimensions, a
matching series resistor into the trace from the output of the
OPA820 is used as well as a terminating shunt resistor at the
input of the destination device. Remember also that the
terminating impedance will be the parallel combination of the
shunt resistor and input impedance of the destination device;
this total effective impedance should be set to match the trace
impedance. If the 6dB attenuation of a doubly-terminated
transmission line is unacceptable, a long trace can be
series-terminated at the source end only. Treat the trace as a
capacitive load in this case and set the series resistor value as
shown in the plot of RS vs Capacitive Load. This will not
preserve signal integrity as well as a doubly-terminated line.
If the input impedance of the destination device is low, there
will be some signal attenuation due to the voltage divider
formed by the series output into the terminating impedance.
e) Socketing a high-speed part like the OPA820 is not
recommended. The additional lead length and pin-to-pin
capacitance introduced by the socket can create an extremely
troublesome parasitic network, which can make it almost
impossible to achieve a smooth, stable frequency response.
Best results are obtained by soldering the OPA820 onto the
board.
21
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INPUT AND ESD PROTECTION
The OPA820 is built using a very high-speed complementary
bipolar process. The internal junction breakdown voltages are
relatively low for these very small geometry devices. These
breakdowns are reflected in the Absolute Maximum Ratings
table. All device pins are protected with internal ESD
protection diodes to the power supplies, as shown in
Figure 13.
These diodes provide moderate protection to input overdrive
voltages above the supplies as well. The protection diodes
can typically support 30mA continuous current. Where higher
currents are possible (for example, in systems with ±15V
supply parts driving into the OPA820), current-limiting series
resistors should be added into the two inputs. Keep these
resistor values as low as possible since high values degrade
both noise performance and frequency response. Figure 14
shows an example protection circuit for I/O voltages that may
exceed the supplies.
+VCC
+5V
50Ω Source
External
Pin
Power−supply
decoupling not shown.
174Ω
V1
50Ω
50Ω D1
D2 OPA820
VO
−VCC
Figure 13. Internal ESD Protection
RF
301Ω
50Ω
RG
301Ω
−5V
D1 = D2 IN5911 (or equivalent)
Figure 14. Gain of +2 with Input Protection
22
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enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or service without notice. Customers should obtain the latest relevant information before placing
orders and should verify that such information is current and complete. All products are sold subject to TI’s terms
and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
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Following are URLs where you can obtain information on other Texas Instruments products and application
solutions:
Products
Applications
Amplifiers
amplifier.ti.com
Audio
www.ti.com/audio
Data Converters
dataconverter.ti.com
Automotive
www.ti.com/automotive
DSP
dsp.ti.com
Broadband
www.ti.com/broadband
Interface
interface.ti.com
Digital Control
www.ti.com/digitalcontrol
Logic
logic.ti.com
Military
www.ti.com/military
Power Mgmt
power.ti.com
Optical Networking
www.ti.com/opticalnetwork
Microcontrollers
microcontroller.ti.com
Security
www.ti.com/security
Telephony
www.ti.com/telephony
Video & Imaging
www.ti.com/video
Wireless
www.ti.com/wireless
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