J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 –1 to –6.5 J309 –1 to –4 –25 8 12 –25 10 J310 12 –2 to –6.5 –25 8 24 SST308 –1 to –6.5 –25 8 12 SST309 –1 to –4 –25 10 12 SST310 –2 to –6.5 –25 8 24 U309 –1 to –4 –25 10 12 U310 –2.5 to –6 –25 10 24 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz D Very Low Noise: 2.7 dB @ 450 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D D D D D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION and is available with tape-and-reel options. The U series hermetically-sealed TO-206AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.) The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-236 (SOT-23) package provides surface-mount capabilities TO-226AA (TO-92) D 1 S 2 G 3 For similar dual products packaged in the TO-78, see the U430/431 data sheet. TO-206AC (TO-52) TO-236 (SOT-23) D S 1 3 Top View J308 J309 J310 S 1 G 2 Top View SST308 (Z8)* SST309 (Z9)* SST310 (Z0)* *Marking Code for TO-236 2 3 D G and Case Top View U309 U310 For applications information see AN104. Document Number: 70237 S-04028—Rev. G, 04-Jun-01 www.vishay.com 7-1 J/SST/U308 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current : (J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA (U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature : (J/SST Prefixes) . . . . . . . . . . . . . . –55 to 150_C (U Prefix) . . . . . . . . . . . . . . . . . . . . –65 to 175_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C (J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW (U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW Power Dissipation : Notes a. Derate 2.8 mW/_C above 25_C b. Derate 4 mW/_C above 25_C SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED) Limits J/SST308 Parameter Symbol Test Conditions Typa V(BR)GSS IG = –1 mA , VDS = 0 V –35 VGS(off) VDS = 10 V, ID = 1 nA J/SST309 Min Max Min J/SST310 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage IDSS IGSS TA = 125_C –25 –25 V –1 –6.5 –1 –4 –2 –6.5 V 12 60 12 30 24 60 mA –0.002 –1 –1 –1 nA –0.001 –1 –1 –1 mA VDS = 10 V, VGS = 0 V VGS = –15 V, VDS = 0 V –25 IG VDG = 9 V, ID = 10 mA –15 pA rDS(on) VGS = 0 V, ID = 1 mA 35 W VGS(F) IG = 10 mA VDS = 0 V J 0.7 1 1 1 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en 14 VDS = 10 V, ID = 10 mA f = 1 kHz VDS = 10 V VGS = –10 V f = 1 MHz 8 10 mS 110 250 250 250 5 5 5 2.5 2.5 2.5 J 4 SST 4 J 1.9 SST 1.9 VDS = 10 V, ID = 10 mA f = 100 Hz 8 6 mS pF nV⁄ √Hz High Frequency Common-Gate Forward Transconductance f = 105 MHz gfg Common-Gate Output Conductance gog Common-Gate Power Gainc Gpg Noise Figure NF VDS = 10 V ID = 10 mA 13 f = 105 MHz 0.16 f = 450 MHz 0.55 f = 105 MHz 16 f = 450 MHz 11.5 f = 105 MHz 1.5 f = 450 MHz 2.7 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Gain (Gpg) measured at optimum input noise match. www.vishay.com 7-2 14 f = 450 MHz mS dB NZB Document Number: 70237 S-04028—Rev. G, 04-Jun-01 J/SST/U308 Series Vishay Siliconix SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED) Limits U309 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = –1 mA , VDS = 0 V –35 –25 VGS(off) VDS = 10 V, ID = 1 nA IDSS VDS = 10 V, VGS = 0 V U310 Max Min Max Unit –1 –4 –2.5 –6 V 12 30 24 60 mA Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb VGS = –15 V, VDS = 0 V Gate Reverse Current Gate Operating Current IGSS TA = 125_C –25 V –0.002 –0.15 –0.15 nA –0.001 –0.15 –0.15 mA IG VDG = 9 V, ID = 10 mA –15 pA Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 W Gate-Source Forward Voltage VGS(F) IG = 10 mA , VDS = 0 V 0.7 1 1 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en 14 VDS = 10 V, ID = 10 mA f = 1 kHz VDS = 10 V, VGS = –10 V f = 1 MHz VDS = 10 V, ID = 10 mA f = 100 Hz 10 mS 10 110 250 250 4 5 5 1.9 2.5 2.5 mS pF nV⁄ √Hz 6 High Frequency Common-Gate Forward Transconductance Common-Gate Output Conductance gfg gog VDS = 10 V ID = 10 mA Common-Gate Power Gainc Gpg f = 105 MHz 14 f = 450 MHz 13 f = 105 MHz 0.16 f = 450 MHz 0.55 f = 105 MHz 16 14 14 f = 450 MHz 11.5 10 10 f = 105 MHz 1.5 2 2 f = 450 MHz 2.7 3.5 3.5 mS dB Noise Figure NF Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Gain (Gpg) measured at optimum input noise match. Document Number: 70237 S-04028—Rev. G, 04-Jun-01 NZB www.vishay.com 7-3 J/SST/U308 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 50 80 40 60 30 gfs 40 20 IDSS 20 10 0 –2 –1 –3 –4 IGSS @ 125_C 100 pA 200 mA 10 pA 10 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 –5 3 6 9 12 15 VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 100 300 20 240 60 180 rDS gos 40 120 20 60 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz gos – Output Conductance (mS) 80 gfs – Forward Transconductance (mS) VGS(off) = –3 V 0 0 –1 0 –2 –3 –4 VDS = 10 V f = 1 kHz 16 TA = –55_C 12 25_C 8 125_C 4 0 –5 0.1 1 VGS(off) – Gate-Source Cutoff Voltage (V) 10 ID – Drain Current (mA) Output Characteristics Output Characteristics 15 30 VGS(off) = –3 V VGS(off) = –1.5 V VGS = 0 V 12 VGS = 0 V 24 ID – Drain Current (mA) ID – Drain Current (mA) 200 mA TA = 125_C 1 nA 0 0 rDS(on) – Drain-Source On-Resistance ( Ω ) IG @ ID = 10 mA IG – Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 10 nA gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) 100 –0.2 V 9 –0.4 V 6 –0.6 V –0.8 V 3 –0.4 V 18 –0.8 V –1.2 V 12 –1.6 V 6 –2.0 V –2.4 V –1.0 V 0 0 0 0.2 0.4 0.6 VDS – Drain-Source Voltage (V) www.vishay.com 7-4 0.8 1 0 0.2 0.4 0.6 0.8 1 VDS – Drain-Source Voltage (V) Document Number: 70237 S-04028—Rev. G, 04-Jun-01 J/SST/U308 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Output Characteristics 20 50 VGS(off) = –1.5 V VGS(off) = –3 V VGS = 0 V VGS = 0 V 40 –0.2 V 12 ID – Drain Current (mA) ID – Drain Current (mA) 16 –0.4 V 8 –0.6 V –0.8 V 4 –0.4 V 30 –0.8 V –1.2 V 20 –1.6 V 10 –2.0 V –1.0 V –2.4 V 0 0 0 4 2 6 8 10 0 2 VDS – Drain-Source Voltage (V) Transfer Characteristics 8 10 100 VGS(off) = –1.5 V VDS = 10 V VGS(off) = –3 V VDS = 10 V 80 ID – Drain Current (mA) 24 ID – Drain Current (mA) 6 Transfer Characteristics 30 TA = –55_C 18 25_C 12 125_C 6 TA = –55_C 60 25_C 40 125_C 20 0 0 0 –0.4 –0.8 –1.2 –1.6 –2 0 –0.6 VGS – Gate-Source Voltage (V) –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 30 50 24 VDS = 10 V f = 1 kHz VGS(off) = –3 V gfs – Forward Transconductance (mS) VGS(off) = –1.5 V gfs – Forward Transconductance (mS) 4 VDS – Drain-Source Voltage (V) TA = –55_C 25_C 18 125_C 12 6 0 VDS = 10 V f = 1 kHz 40 TA = –55_C 30 25_C 20 125_C 10 0 0 –0.4 –0.8 –1.2 –1.6 VGS – Gate-Source Voltage (V) Document Number: 70237 S-04028—Rev. G, 04-Jun-01 –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) www.vishay.com 7-5 J/SST/U308 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 100 VGS(off) = –1.5 V 60 40 VGS(off) = –3 V Assume VDD = 15 V, VDS = 5 V RL + 60 VGS(off) = –1.5 V 20 20 VGS(off) = –3 V 0 1 10 100 0.1 1 10 ID – Drain Current (mA) ID – Drain Current (mA) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 15 10 12 VDS = 0 V 9 6 VDS = 5 V 3 f = 1 MHz Crss – Reverse Feedback Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 4 2 VDS = 5 V 0 0 0 –8 –4 –12 –16 –20 0 VGS – Gate-Source Voltage (V) –8 –4 –12 –16 –20 VGS – Gate-Source Voltage (V) Input Admittance vs. Frequency 100 Forward Admittance vs. Frequency 100 gig –gfg 10 (mS) (mS) 10 big 1 bfg 1 TA = 25_C VDG = 10 V ID = 10 mA Common–Gate TA = 25_C VDG = 10 V ID = 10 mA Common–Gate 0.1 0.1 100 200 500 f – Frequency (MHz) www.vishay.com 7-6 10 V ID 40 0 Ciss – Input Capacitance (pF) g fs R L AV + 1 ) R g L os 80 80 AV – Voltage Gain rDS(on) – Drain-Source On-Resistance ( Ω ) 100 1000 100 200 500 1000 f – Frequency (MHz) Document Number: 70237 S-04028—Rev. G, 04-Jun-01 J/SST/U308 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Admittance vs. Frequency Reverse Admittance vs. Frequency 100 10 TA = 25_C VDG = 10 V ID = 10 mA Common–Gate TA = 25_C VDG = 10 V ID = 10 mA Common–Gate 10 1 bog (mS) (mS) –brg +grg –grg 0.1 gog 1 0.1 0.01 100 200 500 100 1000 200 Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current 150 20 VGS(off) = –3 V 16 gos – Output Conductance (µS) Hz VDS = 10 V en – Noise Voltage nV / 1000 500 f – Frequency (MHz) f – Frequency (MHz) 12 ID = 1 mA 8 ID = 10 mA 4 VDS = 10 V f = 1 kHz 120 90 TA = –55_C 60 25_C 30 125_C 0 0 10 100 1k f – Frequency (Hz) Document Number: 70237 S-04028—Rev. G, 04-Jun-01 10 k 100 k 0.1 1 10 ID – Drain Current (mA) www.vishay.com 7-7