N-Channel JFET General Purpose Amplifier CORPORATION 2N4117 – 2N4119 / 2N4117A – 2N4119A PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119 FEATURES PIN CONFIGURATION Leakage • Low • Low Capacitance ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) TO - 92 TO-72 C G D Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/ oC G D S S SOT-23 NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. G 5007 D S ORDERING INFORMATION PRODUCT MARKING (SOT-23) SST4117 T17 Part Package Temperature Range SST4118 T18 SST4119 T19 2N4117-19/A Hermetic TO-72 PN4117-19/A Plastic TO-92 SST4117-19 Plastic SOT-23 X2N4117-19/A Sorted Chips in Carriers -55oC to +175oC -55oC to +135oC -55oC to +135oC -55oC to +175oC ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL BVGSS 4117/A PARAMETER -40 Gate-Source Breakdown Voltage Gate Reverse Current A devices IGSS 4118/A 4119/A MIN MAX MIN MAX MIN MAX A devices -40 -40 V -10 -10 -10 -1 -1 -1 -25 -25 -25 -2.5 -2.5 -2.5 -1.8 -1 -3 -2 UNITS VGS(off) Gate-Source Pinch-Off Voltage -0.6 -6 0.02 0.09 0.08 0.24 0.20 0.60 pA nA TEST CONDITIONS IG = -1µA, VDS = 0 VGS = -20V, VDS = 0 TA = +150oC V VDS = 10V, ID = 1nA mA VDS = 10V, VGS = 0 µS VGS = 0, f = 30MHz IDSS Drain Current at Zero Gate Voltage (Note 1) gfs Common-Source Forward Transconductance (Note 1) 70 gfs Common-Source Forward Transconductance (Note 2) 60 gos Common-Source Output Conductance 3 5 10 VDS = 10V, VGS = 0, f = 1kHz Ciss Common-Source Input Capacitance (Note 2) 3 3 3 VDS = 10V, VGS = 0, f = 1MHz Crss Common-Source Reverse Transfer Capacitance (Note 2) 1.5 1.5 1.5 210 80 250 70 100 330 90 VDS = 10V, f = 1kHz pF NOTES: 1. Pulse test: Pulse duration of 2ms used during test. 2. For design reference only, not 100% tested. VDS = 10V, VGS = 0, f = 1MHz