CALOGIC XM116

Diode Protected N-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
CORPORATION
M116
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
• Low IGSS
• Integrated Zener Clamp for Gate Protection
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.1mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +125oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/ oC
PIN CONFIGURATION
TO-72
S
C
1003Z
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
G
D
ORDERING INFORMATION
DEVICE SCHEMATIC
1
Part
Package
M116
XM116
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55oC to +125oC
-55oC to +125oC
2
3
4
0330
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
rDS(on)
Drain Source ON Resistance
VGS(th)
Gate Threshold Voltage
1
BVDSS
Drain-Source Breakdown Voltage
30
BVSDS
Source-Drain Breakdown Voltage
30
BVGBS
Gate-Body Breakdown Voltage
30
ID(OFF)
MAX
100
200
UNITS
Ω
5
TEST CONDITIONS
VGS = 20V, ID = 100µA
VGS = 10V, ID = 100µA
VGS = VDS, ID = 10µA
V
ID = 1µA, VGS = 0
IS = 1µA, VGD = VBD = 0
60
IG = 10µA, VSB = VDB = 0
Drain Cuttoff Current
10
VDS = 20V, VGS = 0
IS(OFF)
Source Cutoff Current
10
IGSS
Gate-Body Leakage
100
Cgs
Gate-Source (Note 1)
2.5
Cgd
Gate-Drain Capacitance (Note 1)
2.5
Cdb
Drain-Body Capacitance (Note 1)
7
Ciss
Input Capacitance (Note 1)
10
NOTE 1: For design reference only, not 100% tested.
nA
pA
VSD = 20V, VGD = VBD = 0
VGS = 20V, VDS = 0
VGB = VDB = VSB = 0, f = 1MHz
Body Guarded
pF
VGB = 0, VDB = 10V, f = 1MHz
VGB = 0, VDB = 10V, VBS = 0, f = 1MHz