Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION M116 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.1mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +125oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/ oC PIN CONFIGURATION TO-72 S C 1003Z NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. G D ORDERING INFORMATION DEVICE SCHEMATIC 1 Part Package M116 XM116 Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC 2 3 4 0330 ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER MIN rDS(on) Drain Source ON Resistance VGS(th) Gate Threshold Voltage 1 BVDSS Drain-Source Breakdown Voltage 30 BVSDS Source-Drain Breakdown Voltage 30 BVGBS Gate-Body Breakdown Voltage 30 ID(OFF) MAX 100 200 UNITS Ω 5 TEST CONDITIONS VGS = 20V, ID = 100µA VGS = 10V, ID = 100µA VGS = VDS, ID = 10µA V ID = 1µA, VGS = 0 IS = 1µA, VGD = VBD = 0 60 IG = 10µA, VSB = VDB = 0 Drain Cuttoff Current 10 VDS = 20V, VGS = 0 IS(OFF) Source Cutoff Current 10 IGSS Gate-Body Leakage 100 Cgs Gate-Source (Note 1) 2.5 Cgd Gate-Drain Capacitance (Note 1) 2.5 Cdb Drain-Body Capacitance (Note 1) 7 Ciss Input Capacitance (Note 1) 10 NOTE 1: For design reference only, not 100% tested. nA pA VSD = 20V, VGD = VBD = 0 VGS = 20V, VDS = 0 VGB = VDB = VSB = 0, f = 1MHz Body Guarded pF VGB = 0, VDB = 10V, f = 1MHz VGB = 0, VDB = 10V, VBS = 0, f = 1MHz