PS2911-1 NEC's HIGH CTR 4 PIN ULTRA SMALL PACKAGE FLAT LEAD OPTOCOUPLER FEATURES DESCRIPTION • HIGH CURRENT TRANSFER RATIO: NEC's PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications. An ultra small flat lead package has been provided which realizes a reduction in mounting area of about 30% compared with the PS28XX series. • SMALL AND THIN PACKAGE: 4.6 (L) x 2.5 (W) x 2.1 (H) mm CTR = 200% TYP @ IF = 1 mA, VCE = 5 V • HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. • TAPE AND REEL AVAILABLE APPLICATIONS •DC/DC CONVERTER •MODEM/PC CARD ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS Transistor Diode PART NUMBER PS2911-1 PARAMETERS UNITS MIN TYP MAX 0.9 1.1 1.3 VF Forward Voltage, IF = 5 mA V I R Reverse Current, VR = 5 V µA CT Terminal Capacitance, V = 0, f = 1.0 MHz pF Collector to Emitter Current, IF = 0 mA, VCE = 40 V nA ICEO 5 15 100 CTR Current Transfer Ratio (IC/IF)1, IF = 1 mA, VCE = 5 V % VCE(sat) Collector Saturation Voltage, IF = 1 mA, IC = 0.2 mA V RI-O Isolation Resistance, VI-O = 1.0 k VDC Ω CI-O Isolation Capacitance, V = 0 V, f = 1.0 MHz pF 0.4 Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 Ω µs 5 Coupled tR 400 0.3 1011 tF Fall µs 10 ton On Time2, VCC = 5 V, IF = 1 mA, RL = 5 kΩ µs 40 ts Storage Time2, VCC = 5 V, IF = 1 mA, RL = 5 kΩ µs 10 µs 120 toff Off Time2, 1. CTR RANK: N: 100 to 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%) VCC = 5 V, IC = 2 mA, RL = 100 Ω 200 0.13 Time2, 100 VCC = 5 V, IF = 1 mA, RL = 5 kΩ 2. Test Circuit for Switching Time VCC PULSE INPUT PS2911-1 3 4 PW = 100 µs Duty Cycle = 1/10 In monitor IF 50 Ω VOUT RL = 100 Ω or 5 kΩ 1 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: August 4, 2005 PS2911-1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) OPTOCOUPLER CONSTRUCTION SYMBOLS Diode IF ∆IF/˚C IF (Peak) PD VR Transistor VCEO VECO IC ∆PC/˚C PC Coupled BV PT TA TSTG PARAMETER UNITS (MIN) Air Distance 4 mm Creepage Distance 4 mm Isolation Distance 0.4 mm 50 0.5 0.5 60 6 Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation V V mA mW/˚C mW 40 5 40 1.2 120 Vr.m.s. mW °C °C 2500 160 -55 to +100 -55 to +150 Isolation Voltage3 Total Power Dissipation Operating Ambient Temp. Storage Temperature Notes: 1. Operation in excess pf any one of these parameters may result in permanent damage. 2. PW = 100 µs, Duty Cycle = 1%. 3. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output. CAUTIONS REGARDING NOISE: Be aware that when voltage is applied suddenly between the optocoupler's input and outout or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. OUTLINE DIMENSIONS (Units in mm) 2.5±0.3 4 3 N 1 4.1 MIN mA mA/°C A mW V 2 5.0±0.2 +0.1 Forward Current (DC) Forward Current Derating Peak Forward Current2 Power Dissipation Reverse Voltage 0.15 -0.05 RATINGS 4.6±0.2 UNITS 2.1 MAX PARAMETERS 0.4±0.1 0.2±0.1 1.27 TOP VIEW ORDERING INFORMATION (Solder Contains Lead) PART NUMBER PS2911-1-F3 PS2911-1-F4 PACKING STYLE Embossed Tape 3500 pcs/reel ORDERING INFORMATION (Pb-Free) PART NUMBER PS2911-1-F3-A PS2911-1-F4-A PACKING STYLE Embossed Tape 3500 pcs/reel RECOMMENDED MOUNT PAD DIMENSIONS (Units in mm) 0.8 0.6 1.27 (0.35) 1. Anode 2. Cathode 3. Emitter 4. Collector –An initial of "NEC" N 111 No. 1 pin mark (nicked corner) 4.14 –Last number of Type No: 11 5.7 11 4.7 MARKING –Assembly lot 24-R0.1 1 11 Week assembled Year assembled ( ): Reference value Remark: This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All dimensions in this figure must be evaluated before use. PS2911-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. ambient temperature 140 Transistor Power Dissipation, PC (mW) Maximum Forward Current, IF (mA) 80 60 40 0.5 mA/°C 20 25 0 50 75 TRANSISTOR POWER DISSIPATION vs. ambient temperature 120 100 80 60 40 20 0 100 25 20 100 Collector Current, IC (V) TA = +100°C +60°C +25°C 0°C -25°C -50°C 0.1 IF = 5 mA 16 14 12 10 8 6 2 mA 4 1 mA 2 0.01 0.0 0.5 1.0 1.5 0.5 mA 0 2.0 2 10 10000 Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 1000 VCE = 20 V 40 V 10 1 -25 0 25 50 4 6 8 10 Collector to Emitter Voltage, VCE (V) Forward Voltage, VF (V) 100 120 CTR = 200 % 18 Forward Current, IF (mA) 100 COLLECTOR CURRENTvs. COLLECTOR TO EMITTER VOLTAGE FORWARD CURRENTvs. FORWARD VOLTAGE 1 75 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) 10 50 75 Ambient Temperature, TA (°C) 100 COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE CTR = 200% 5 mA 2 mA 1 mA 1 IF = 0.5 mA 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage, VCE(sat) (V) PS2911-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) 500 1.4 Current Transfer Ratio, CTR (%) Normalized Current Transfer Ratio, CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 2 V 0.2 0.0 -50 -25 0 25 50 75 CURRENT TRANSFER RATIO vs. FORWARD CURRENT VCE = 5 V, n=3 400 B 200 100 0 0.1 100 100 0 toff Normalized Gain, GV Switching Time, t (µs) 10 FREQUENCY RESPONSE IF = 1 mA, VCC = 5 V, CTR = 200 % 100 1 Forward Current, IF (mA) SWITCHING TIME vs. LOAD RESISTANCE 1000 C 300 Ambient Temperature, TA (°C) 10000 Sample A ts ton 10 -5 100 Ω RL = 1 kΩ -10 300 Ω -15 -20 1 1k 10k 100k 1000k LONG TERM CTR DEGRADATION 1.2 IF = 1 mA TA = 25°C CTR (relative Value) 0.8 60°C 0.6 0.4 0.2 0.0 10 10 2 10 3 10 4 Time (Hr) 1 10 100 Frequency, f (kHz) Load Resistance, RL (Ω) 1.0 -25 0.1 10 5 10 6 1000 PS2911-1 TAPING SPECIFICATIONS (Units in mm) +0.1 5.3 ± 0.1 1.55 -0 1.55 ± 0.05 2.9 MAX 12.0 ± 0.2 2.0 ± 0.5 4.0 ± 0.1 1.75 ± 0.1 Tape Outline and Dimensions 5.3 ± 0.1 2.4±0.1 2.9 ± 0.1 4.0 ± 0.1 Tape Direction N N N N N N N PS2911-1-F4 N PS2911-1-F3 Reel Outline and Dimensions 2.0±0.5 2.0 ± 0.5 R1.0 Packing: 3500 pcs/reel φ21.0 ± 0.8 φ100 ± 1.0 φ330±2.0 φ13.0 ± 0.2 13.5±1.0 11.9 to 15.4 Outer edge of flange PS2911-1 Recommended Soldering Conditions (1) Infrared reflow soldering • Peak reflow temperature 260 ˚C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220 ˚C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260 ˚C (peak temperature) 220 ˚C to 60 s 180 ˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260 ˚C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). (3) Cautions • Fluxes Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature ad high humidity. 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