CET CEB02N6

CEP02N6/CEB02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
Symbol
DYNAMIC CHARACTERISTICS b
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS = 0V
f =1.0MHZ
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
4
a
250
PF
50
PF
30
PF
VGS = 0V, Is =2A
VSD
1.5
Notes
a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.
c. L=60mH, IAS=2.0A, VDD=50V, RG=25Ω , Starting TJ=25 C
3.0
VGS=10,9,8,7V
ID, Drain Current (A)
2.5
ID, Drain Current(A)
4
2.0
1.5
VGS=6V
1.0
VGS=5V
0.5
150 C
1
-55 C
0.1
0
0
2
4
6
8
10
2
12
1.VDS=40V
2.Pulse Test
25 C
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
4-4
V
CEP02N6/CEB02N6
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
600
C, Capacitance (pF)
500
400
Ciss
300
200
Coss
100
Crss
0
0
5
10
15
20
25
2.2
ID=1A
VGS=10V
1.9
4
1.6
1.3
1.0
0.7
0.4
-100
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.30
VDS=VGS
ID=250ӴA
1.10
1.00
0.90
0.80
0.70
0
25
50
150
200
75 100 125 150
1.15
ID=250ӴA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
20
10
4
VDS=50V
Is, Source-drain current (A)
gFS, Transconductance (S)
100
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
0.60
-50 -25
50
TJ, Junction Temperature( C)
VDS, Drain-to Source Voltage (V)
1.20
0
-50
3
2
1
VGS=0V
1
0.1
0
0
1
2
3
4
0.4
IDS, Drain-Source Current (A)
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
4-5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
CEP02N6/CEB02N6
ID, Drain Current (A)
1
9
3
0
0
6
12
(O
N)
Li
10
m
s
0.1
0.01
24
18
R
DS
0
1m ijs
s
C
6
1
t
mi
D
VGS, Gate to Source Voltage (V)
VDS=480V
ID=2A
12
TC=25C
Tj=25 C
Single Pulse
1
500 1000
100
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
RGEN
toff
tr
td(on)
VGS
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
2
r(t),Normalized Effective
Transient Thermal Impedance
4
10
15
1
D=0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
0.01
0.01
1. RįJC (t)=r (t) * RįJC
2. RįJC=See Datasheet
3. TJM-TC = P* RįJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
0.1
1
10
100
1000
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
4-6
10000