CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D Tc = 25 C unless otherwise noted Symbol Limit 250 Units V VGS ±20 V ID 6.7 A IDM 26 A 46 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C 0.37 W/ C TJ,Tstg -55 to 150 C Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 2.7 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Rev 2. 2010.June http://www.cetsemi.com Details are subject to change without notice . 1 CEDF634/CEUF634 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 250 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 250V, VGS = 0V 25 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 450 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 3.5A gFS VDS = 50V, ID = 5.1A 2 4.4 S 925 pF 95 pF 20 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 125V, ID = 5.6A, VGS = 10V, RGEN = 12Ω 16 32 ns 3.5 7 ns 38 76 ns Turn-Off Fall Time tf 4 8 ns Total Gate Charge Qg 18 23 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 200V, ID =5.6A, VGS = 10V 3 nC 5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 6.7A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.UIS condition Vdd=25V L=2mH Rg=25ohm Ias=6.7A. 2 0.9 6.7 A 1.5 V CEDF634/CEUF634 VGS=10,9,8,7V 10 ID, Drain Current (A) ID, Drain Current (A) 12 8 VGS=6V 6 4 VGS=5V 2 0 0 1 2 3 4 5 6 10 -1 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 600 400 Coss 200 Crss 10 20 30 40 50 3.0 2.5 1.VDS=40V 2.Pulse Test 25 C 2 4 6 8 10 ID=5.1A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C Figure 2. Transfer Characteristics Ciss 0 TJ=150 C Figure 1. Output Characteristics IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0 VGS, Gate-to-Source Voltage (V) 800 1.2 10 VDS, Drain-to-Source Voltage (V) 1000 1.3 1 VGS=4V 1200 0 10 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=200V ID=5.6A 6 4 2 0 0 3 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEDF634/CEUF634 6 9 12 15 18 10 100ms 1ms 10ms 10 10 21 1 DC 0 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 0.01 t1 Single Pulse 10 -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3